STGW40H60DLFB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGW40H60DLFB
Tipo de transistor: IGBT + Diode
Código de marcado: GW40H60DLFB
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 283 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
Coesⓘ - Capacitancia de salida, typ: 198 pF
Qgⓘ - Carga total de la puerta, typ: 210 nC
Paquete / Cubierta: TO247
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STGW40H60DLFB Datasheet (PDF)
stgw40h60dlfb.pdf
STGW40H60DLFB, STGWT40H60DLFBTrench gate field-stop IGBT, HB series 600 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A323 Tight parameters distribution12 Safe paralleling1 L
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf
STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio
stgw40h65dfb.pdf
STGW40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A32 Tight parameter distribution1 Safe parallelingTO-247 Positive VCE(sat) temperature coefficient Lo
stgw40h65fb.pdf
STGW40H65FB, STGFW40H65FB, STGWT40H65FBTrench gate field-stop IGBT, HB series 650 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 High speed switching series3 Minimized tail current21 Very low saturation voltage: VCE(sat) = 1.6 V TABTO-3PF(typ.) @ IC = 40 A Tight parameters distribution
Otros transistores... IRGP4078D , NGTB15N120IH , NGTB15N120IHWG , IHW50N65R5 , IKW50N65WR5 , STGB40V60F , STGP40V60F , STGW15M120DF3 , MBQ50T65FDSC , STGW40H65DFB , STGW40H65FB , STGW40V60DF , STGW40V60DLF , STGW40V60F , STGWA15M120DF3 , STGWT40H60DLFB , STGWT40H65DFB .
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