STGW40H60DLFB Todos los transistores

 

STGW40H60DLFB IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGW40H60DLFB

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 283 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

Coesⓘ - Capacitancia de salida, typ: 198 pF

Encapsulados: TO247

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STGW40H60DLFB datasheet

 ..1. Size:1485K  st
stgw40h60dlfb.pdf pdf_icon

STGW40H60DLFB

STGW40H60DLFB, STGWT40H60DLFB Trench gate field-stop IGBT, HB series 600 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 40 A 3 2 3 Tight parameters distribution 1 2 Safe paralleling 1 L

 6.1. Size:431K  st
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf pdf_icon

STGW40H60DLFB

STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 2 3 1 2 High speed switching series 1 TO-3PF TO-247 Minimized tail current Very low saturation voltage VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling 3 2 1 Tight parameter distributio

 6.2. Size:498K  st
stgw40h65dfb.pdf pdf_icon

STGW40H60DLFB

STGW40H65DFB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 40 A 3 2 Tight parameter distribution 1 Safe paralleling TO-247 Positive VCE(sat) temperature coefficient Lo

 6.3. Size:1573K  st
stgw40h65fb.pdf pdf_icon

STGW40H60DLFB

STGW40H65FB, STGFW40H65FB, STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 High speed switching series 3 Minimized tail current 2 1 Very low saturation voltage VCE(sat) = 1.6 V TAB TO-3PF (typ.) @ IC = 40 A Tight parameters distribution

Otros transistores... IRGP4078D , NGTB15N120IH , NGTB15N120IHWG , IHW50N65R5 , IKW50N65WR5 , STGB40V60F , STGP40V60F , STGW15M120DF3 , G50T65D , STGW40H65DFB , STGW40H65FB , STGW40V60DF , STGW40V60DLF , STGW40V60F , STGWA15M120DF3 , STGWT40H60DLFB , STGWT40H65DFB .

History: SGS23N60UFD

 

 

 


History: SGS23N60UFD

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