STGW40V60DF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGW40V60DF

Código: GW40V60DF

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 283

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2.15

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 40

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 17

Capacitancia de salida (Cc), pF: 220

Empaquetado / Estuche: TO247

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STGW40V60DF Datasheet (PDF)

..1. stgw40v60df.pdf Size:1828K _st

STGFW40V60DF, STGW40V60DF, STGWT40V60DFTrench gate field-stop IGBT, V series 600 V, 40 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.8 V (typ.) @ IC = 40 A21 Tight parameters distributionTABTO-3PF Safe paralleling Low thermal resistance Very fast

4.1. stgw40v60dlf.pdf Size:1275K _st

STGW40V60DLF, STGWT40V60DLFTrench gate field-stop IGBT, V series 600 V, 40 A very high speedDatasheet - production dataFeatures Designed for soft commutation onlyTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.8 V (typ.) @ IC = 40 A Tight parameters distribution3231 Safe paralleling21 Low thermal resis

5.1. stgw40v60f.pdf Size:1889K _st

STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60FTrench gate field-stop IGBT, V series 600 V, 40 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C111 Tail-less switching off31 VCE(sat) = 1.8 V (typ.) @ IC = 40 A3D2PAK 21 Tight parameters distributionTAB TO-3PF Safe paralleling Low thermal

 8.1. stgw40nc60kd.pdf Size:841K _st

STGW40NC60KD600 V, 40 A short-circuit rugged IGBTDatasheet - production dataFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short-circuit withstand time 10 s3 IGBT co-packaged with ultra fast free-wheeling 2diode1ApplicationsTO-247 High frequency inverters Motor driversFigure 1. Internal sch

8.2. stgw40nc60wd.pdf Size:405K _st

STGW40NC60WD40 A - 600 V - ultra fast IGBTFeatures Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode High frequency operation321TO-247Applications High frequency inverters, UPS Motor drivers HF, SMPS and PFC in both hard switch and resonant topologies WeldingFigure 1. Internal

 8.3. stgw40nc60v.pdf Size:281K _st

STGW40NC60VN-CHANNEL 50A - 600V - TO-247Very Fast PowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGW40NC60V 600 V

8.4. stgw40h120f2.pdf Size:329K _st

STGW40H120F2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A3 5 s minimum short circuit withstand time at 2TJ=150 C1 Tight parameters distribution Safe paralleling

 8.5. stgw40n120kd.pdf Size:757K _st

STGW40N120KDSTGWA40N120KD40 A, 1200 V short circuit rugged IGBT with Ultrafast diodeFeatures Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3diode21ApplicationsTO-247 Motor controlDescriptionFigure 1. Internal schematic diagramThis high voltage and short

8.6. stgw40h120df2.pdf Size:699K _st

STGW40H120DF2,STGWA40H120DF2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247TO

8.7. stgw40nc60w.pdf Size:330K _st

STGW40NC60W40 A - 600 V - ultra fast IGBTFeatures Low CRES / CIES ratio (no cross conduction susceptibility) High frequency operationApplications321 High frequency inverters, UPSTO-247 Motor drivers HF, SMPS and PFC in both hard switch and resonant topologies Welding Induction heatingFigure 1. Internal schematic diagramDescriptionThis I

8.8. stgw40h60dlfb.pdf Size:1485K _st

STGW40H60DLFB, STGWT40H60DLFBTrench gate field-stop IGBT, HB series 600 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A323 Tight parameters distribution12 Safe paralleling1 L

8.9. stgw40h65fb.pdf Size:1573K _st

STGW40H65FB, STGFW40H65FB, STGWT40H65FBTrench gate field-stop IGBT, HB series 650 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 High speed switching series3 Minimized tail current21 Very low saturation voltage: VCE(sat) = 1.6 V TABTO-3PF(typ.) @ IC = 40 A Tight parameters distribution

8.10. stgw40h65dfb.pdf Size:1516K _st

STGW40H65DFB STGWT40H65DFBTrench gate field-stop IGBT, HB series 650 V, 40 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Very low saturation voltage: VCE(sat) = 1.60 V (typ.) @ IC = 40 A3322 Tight parameters distribution11 Safe paralleling

8.11. stgw40m120df3.pdf Size:1031K _st

STGW40M120DF3 STGWA40M120DF3Trench gate field-stop IGBT, M series 1200 V, 40 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

Otros transistores... IHW50N65R5 , IKW50N65WR5 , STGB40V60F , STGP40V60F , STGW15M120DF3 , STGW40H60DLFB , STGW40H65DFB , STGW40H65FB , IKW50N60H3 , STGW40V60DLF , STGW40V60F , STGWA15M120DF3 , STGWT40H60DLFB , STGWT40H65DFB , STGWT40H65FB , STGWT40V60DF , STGWT40V60DLF .