STGWT40H65DFB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGWT40H65DFB
Tipo de transistor: IGBT + Diode
Código de marcado: GWT40H65DFB
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 283 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 13 nS
Coesⓘ - Capacitancia de salida, typ: 198 pF
Qgⓘ - Carga total de la puerta, typ: 210 nC
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de STGWT40H65DFB - IGBT
STGWT40H65DFB Datasheet (PDF)
stgwt40h65dfb.pdf
STGW40H65DFB STGWT40H65DFBTrench gate field-stop IGBT, HB series 650 V, 40 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Very low saturation voltage: VCE(sat) = 1.60 V (typ.) @ IC = 40 A3322 Tight parameters distribution11 Safe paralleling
stgwt40h65fb.pdf
STGW40H65FB, STGFW40H65FB, STGWT40H65FBTrench gate field-stop IGBT, HB series 650 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 High speed switching series3 Minimized tail current21 Very low saturation voltage: VCE(sat) = 1.6 V TABTO-3PF(typ.) @ IC = 40 A Tight parameters distribution
stgwt40h60dlfb.pdf
STGW40H60DLFB, STGWT40H60DLFBTrench gate field-stop IGBT, HB series 600 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A323 Tight parameters distribution12 Safe paralleling1 L
stgwt40hp65fb.pdf
STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features TAB Maximum junction temperature: T = 175 C J Minimized tail current V = 1.6 V (typ.) @ I = 40 A CE(sat) C Tight parameter distribution Co-packed diode for protection 3 Safe paralleling 21 Low thermal resistance TO-3PApplica
Otros transistores... STGW40H60DLFB , STGW40H65DFB , STGW40H65FB , STGW40V60DF , STGW40V60DLF , STGW40V60F , STGWA15M120DF3 , STGWT40H60DLFB , GT30F133 , STGWT40H65FB , STGWT40V60DF , STGWT40V60DLF , STGW50HF65SD , STGWT50HF65SD , IHW20N120R5 , IHW20N135R5 , MM60G60B .
History: IRG7PA19U
History: IRG7PA19U
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