HGTG10N120BND Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGTG10N120BND 📄📄
Tipo de transistor: IGBT + Diode
Código de marcado: 10N120BND
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 298 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.45 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.8(typ) V
trⓘ - Tiempo de subida, typ: 11 nS
Qgⓘ - Carga total de la puerta, typ: 100 nC
Encapsulados: TO247
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HGTG10N120BND datasheet
..1. Size:106K fairchild semi
hgtg10n120bnd.pdf 
HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 35A, 1200V, TC = 25oC The HGTG10N120BND is a Non-Punch Through (NPT) 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC voltage switching IGBT famil
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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