STGWT50HF65SD Todos los transistores

 

STGWT50HF65SD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWT50HF65SD

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 284 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.05 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Coesⓘ - Capacitancia de salida, typ: 400 pF

Encapsulados: TO3P

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STGWT50HF65SD datasheet

 ..1. Size:1075K  st
stgwt50hf65sd.pdf pdf_icon

STGWT50HF65SD

STGW50HF65SD STGWT50HF65SD 60 A, 650 V, very low drop IGBT with soft and fast recovery diode Datasheet - preliminary data Features Very low on-state voltage drop Low switching off High current capability Very soft Ultrafast recovery antiparallel diode 3 2 3 1 2 Applications 1 PV inverter TO-3P TO-247 UPS Description Figure 1. Internal schematic di

 9.1. Size:796K  1
stgw38ih130d stgwt38ih130d stgws38ih130d.pdf pdf_icon

STGWT50HF65SD

STGW38IH130D, STGWT38IH130D 33 A - 1300 V - very fast IGBT Datasheet - production data Features Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop free- 3 wheeling diode 3 2 2 1 1 Applications Induction cooking, microwave ovens TO-247 TO-3P Soft-switching applications Description Figure 1. Inter

 9.2. Size:903K  1
stgwt40hp65fb.pdf pdf_icon

STGWT50HF65SD

STGWT40HP65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features TAB Maximum junction temperature T = 175 C J Minimized tail current V = 1.6 V (typ.) @ I = 40 A CE(sat) C Tight parameter distribution Co-packed diode for protection 3 Safe paralleling 2 1 Low thermal resistance TO-3P Applica

 9.3. Size:1828K  st
stgwt40v60df.pdf pdf_icon

STGWT50HF65SD

STGFW40V60DF, STGW40V60DF, STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 VCE(sat) = 1.8 V (typ.) @ IC = 40 A 2 1 Tight parameters distribution TAB TO-3PF Safe paralleling Low thermal resistance Very fast

Otros transistores... STGW40V60F , STGWA15M120DF3 , STGWT40H60DLFB , STGWT40H65DFB , STGWT40H65FB , STGWT40V60DF , STGWT40V60DLF , STGW50HF65SD , NGD8201N , IHW20N120R5 , IHW20N135R5 , MM60G60B , RJH1CV6DPK , NGTB15N120FL2 , NGTB15N120FL2WG , NGTG15N120FL2 , NGTG15N120FL2WG .

History: STGW50HF60S

 

 

 


History: STGW50HF60S

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