HGTG11N120CN Todos los transistores

 ..1. Size:138K  fairchild semi
 hgtg11n120cn hgtp11n120cn hgt1s11n120cn.pdf

HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The HGTG11N120CN, HGTP11N120CN, and 43A, 1200V, TC = 25oC HGT1S11N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC

 0.1. Size:105K  fairchild semi
 hgtg11n120cnd.pdf

HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 43A, 1200V, TC = 25oC The HGTG11N120CND is a Non-Punch Through (NPT) 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC voltage switching IGBT famil

 0.2. Size:111K  onsemi
 hgtg11n120cnd.pdf

HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 43A, 1200V, TC = 25oC The HGTG11N120CND is a Non-Punch Through (NPT) 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC voltage switching IGBT famil

 9.1. Size:115K  1
 hgtp12n60a4 hgtg12n60a4 hgt1s12n60a4s.pdf

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S Data Sheet May 1999 File Number 4656.2 600V, SMPS Series N-Channel IGBT Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These de

 9.2. Size:759K  1
 hgtp12n60b3d hgtg12n60b3d hgt1s12n60b3d hgt1s12n60b3ds.pdf

 9.3. Size:734K  1
 hgtg12n60c3dr hgtp12n60c3dr hgt1s12n60c3dr hgt1s12n60c3drs.pdf

 9.4. Size:173K  fairchild semi
 hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching

 9.5. Size:106K  fairchild semi
 hgtg10n120bnd.pdf

HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 35A, 1200V, TC = 25oC The HGTG10N120BND is a Non-Punch Through (NPT) 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC voltage switching IGBT famil

 9.6. Size:183K  fairchild semi
 hgtg18n120bnd.pdf

HGTG18N120BND Data Sheet March 2007 54A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 54A, 1200V, TC = 25oC The HGTG18N120BND is a Non-Punch Through (NPT) 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high Typical Fall Time . . . . . . . . . . . . . . . 140ns at TJ = 150oC voltage switching IGBT family. I

 9.7. Size:207K  fairchild semi
 hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices ha

 9.8. Size:120K  fairchild semi
 hgtg12n60c3d.pdf

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device has t

 9.9. Size:402K  onsemi
 hgtg18n120bn.pdf

IGBT - NPT 1200 V HGTG18N120BN Description HGTG18N120BN is based on Non- Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching www.onsemi.com applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and C power supplies. Features 26 A, 1200 V, TC = 110 C Low Saturatio

 9.10. Size:574K  onsemi
 hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4ds.pdf

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, www.onsemi.com HGTP12N60A4D, HGT1S12N60A4DS C The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices G combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the E low on-state conduction los

 9.11. Size:342K  onsemi
 hgtg12n60c3d.pdf

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 24 A, 600 V HGTG12N60C3D www.onsemi.com The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar C transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies

 9.12. Size:296K  onsemi
 hgtg10n120bn hgtp10n120bn hgt1s10n120bns.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.13. Size:46K  harris semi
 hgtg12n60d1d.pdf

S E M I C O N D U C T O R HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 12A, 600V Latch Free Operation EMITTER COLLECTOR Typical Fall Time

 9.14. Size:102K  harris semi
 hgtg12n60c3d .pdf

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package 24A, 600V at TC = 25oC JEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MO

 9.15. Size:106K  harris semi
 hgtg12n60c3d.pdf

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package 24A, 600V at TC = +25oC JEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage swit