HGTG11N120CND Todos los transistores

 

HGTG11N120CND - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTG11N120CND

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 43

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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HGTG11N120CND Datasheet (PDF)

1.1. hgtg11n120cn hgtp11n120cn hgt1s11n120cn.pdf Size:138K _fairchild_semi

HGTG11N120CND
HGTG11N120CND

HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The HGTG11N120CN, HGTP11N120CN, and • 43A, 1200V, TC = 25oC HGT1S11N120CNS are Non-Punch Through (NPT) IGBT • 1200V Switching SOA Capability designs. They are new members of the MOS gated high • Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC

1.2. hgtg11n120cnd.pdf Size:105K _fairchild_semi

HGTG11N120CND
HGTG11N120CND

HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 43A, 1200V, TC = 25oC The HGTG11N120CND is a Non-Punch Through (NPT) • 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high • Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC voltage switching IGBT famil

 5.1. hgtg10n120bnd.pdf Size:106K _fairchild_semi

HGTG11N120CND
HGTG11N120CND

HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 35A, 1200V, TC = 25oC The HGTG10N120BND is a Non-Punch Through (NPT) • 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC voltage switching IGBT famil

5.2. hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf Size:173K _fairchild_semi

HGTG11N120CND
HGTG11N120CND

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode • >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and • 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching •

 5.3. hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf Size:207K _fairchild_semi

HGTG11N120CND
HGTG11N120CND

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and • >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching • 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and • 600V Switching SOA Capability bipolar transistors. These devices ha

5.4. hgtg12n60c3d.pdf Size:120K _fairchild_semi

HGTG11N120CND
HGTG11N120CND

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching • Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar • Short Circuit Rating transistors. The device has t

 5.5. hgtg18n120bnd.pdf Size:183K _fairchild_semi

HGTG11N120CND
HGTG11N120CND

HGTG18N120BND Data Sheet March 2007 54A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 54A, 1200V, TC = 25oC The HGTG18N120BND is a Non-Punch Through (NPT) • 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high • Typical Fall Time . . . . . . . . . . . . . . . 140ns at TJ = 150oC voltage switching IGBT family. I

5.6. hgtg12n60c3d .pdf Size:102K _harris_semi

HGTG11N120CND
HGTG11N120CND

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 24A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC E C • Short Circuit Rating G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MO

5.7. hgtg12n60d1d.pdf Size:46K _harris_semi

HGTG11N120CND
HGTG11N120CND

S E M I C O N D U C T O R HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 • 12A, 600V • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high vol

5.8. hgtg12n60c3d.pdf Size:106K _harris_semi

HGTG11N120CND
HGTG11N120CND

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package • 24A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 210ns at TJ = +150oC E C • Short Circuit Rating G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage swit

Otros transistores... HGTD7N60C3S , HGTD7N60C3S9A , HGTD8P50G1 , HGTD8P50G1S , HGTD8P50G1S9A , HGTG10N120BN , HGTG10N120BND , HGTG11N120CN , GT30J322 , HGTG12N60A4 , HGTG12N60A4D , HGTG12N60B3D , HGTG12N60C3D , HGTG12N60C3DR , HGTG18N120BN , HGTG18N120BND , HGTG20N120CN .

 

 
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