NGTB45N60S2 Todos los transistores

 

NGTB45N60S2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB45N60S2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 45 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

Coesⓘ - Capacitancia de salida, typ: 130 pF

Encapsulados: TO247

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NGTB45N60S2 datasheet

 ..1. Size:83K  onsemi
 ngtb45n60s2.pdf pdf_icon

NGTB45N60S2

NGTB45N60S2WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

 0.1. Size:83K  onsemi
 ngtb45n60s2wg.pdf pdf_icon

NGTB45N60S2

NGTB45N60S2WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

 4.1. Size:80K  onsemi
 ngtb45n60s1wg.pdf pdf_icon

NGTB45N60S2

NGTB45N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

 4.2. Size:139K  onsemi
 ngtb45n60s.pdf pdf_icon

NGTB45N60S2

NGTB45N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

MOSTRAR MÁS

Otros transistores... MMG50HB120H6HN , NGTB35N60FL2WG , NGTB35N65FL2 , NGTB35N65FL2WG , NGTB40N65IHL2 , NGTB40N65IHL2WG , NGTB45N60S1 , NGTB45N60S1WG , IHW40T60 , NGTB45N60S2WG , NGTG35N65FL2 , NGTG35N65FL2WG , RJH60D7BDPQ-E0 , RJH60D7DPQ-E0 , IGW50N65F5 , IGW50N65H5 , IKW50N65F5 .

History: TGAN60N65F2DR | VS-GB150LH120N | SRE50N120FSUDAT | YGW60N65F1A2 | RJP60F5DPK | TGAF40N60F2D | SII75N06

 

 

 

 

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