RJH60D7BDPQ-E0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJH60D7BDPQ-E0
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 50 nS
Coesⓘ - Capacitancia de salida, typ: 180 pF
Qgⓘ - Carga total de la puerta, typ: 125 nC
Paquete / Cubierta: TO247
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RJH60D7BDPQ-E0 Datasheet (PDF)
rjh60d7bdpq-e0.pdf
Preliminary Datasheet RJH60D7BDPQ-E0 R07DS0795EJ0200600V - 50A - IGBT Rev.2.00Application: Inverter Jul 13, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer tec
r07ds0176ej rjh60d7dpm.pdf
Preliminary Datasheet RJH60D7DPM R07DS0176EJ0200Silicon N Channel IGBT Rev.2.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
r07ds0547ej rjh60d7adp.pdf
Preliminary Datasheet RJH60D7ADPK R07DS0547EJ0100600 V - 50 A - IGBT Rev.1.00Application: Inverter Sep 28, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
r07ds0165ej rjh60d7dpk.pdf
Preliminary Datasheet RJH60D7DPK R07DS0165EJ0300Silicon N Channel IGBT Rev.3.00Application: Inverter Nov 16, 2010Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer t
rjh60d7dpk.pdf
Preliminary Datasheet RJH60D7DPK R07DS0165EJ0400600V - 50A - IGBT Rev.4.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
rjh60d7dpq-e0.pdf
Preliminary Datasheet RJH60D7DPQ-E0 R07DS0740EJ0100600V - 50A - IGBT Rev.1.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer tec
rjh60d7adpk.pdf
Preliminary Datasheet RJH60D7ADPK R07DS0547EJ0200600V - 50A - IGBT Rev.2.00Application: Inverter Apr 19, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techn
rjh60d7dpm.pdf
Preliminary Datasheet RJH60D7DPM R07DS0176EJ0400600V - 50A - IGBT Rev.4.00Application: Inverter Dec 07, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer techno
Otros transistores... NGTB40N65IHL2 , NGTB40N65IHL2WG , NGTB45N60S1 , NGTB45N60S1WG , NGTB45N60S2 , NGTB45N60S2WG , NGTG35N65FL2 , NGTG35N65FL2WG , YGW40N65F1A1 , RJH60D7DPQ-E0 , IGW50N65F5 , IGW50N65H5 , IKW50N65F5 , IKW50N65H5 , IRG8P40N120KD , IRGP6650D , MMG40A120B6C .
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