IKW50N65F5 Todos los transistores

 

IKW50N65F5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKW50N65F5
   Tipo de transistor: IGBT + Diode
   Código de marcado: K50F655
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 305 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.8 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 15 nS
   Coesⓘ - Capacitancia de salida, typ: 65 pF
   Qgⓘ - Carga total de la puerta, typ: 120 nC
   Paquete / Cubierta: TO247
 

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IKW50N65F5 Datasheet (PDF)

 ..1. Size:2247K  infineon
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IKW50N65F5

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW50N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW50N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal

 0.1. Size:2119K  infineon
ikw50n65f5a.pdf pdf_icon

IKW50N65F5

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW50N65F5A650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW50N65F5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antipar

 6.1. Size:1913K  infineon
ikw50n65wr5.pdf pdf_icon

IKW50N65F5

Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW50N65WR5Data sheetInductrial Power ControlIKW50N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior

 6.2. Size:2112K  infineon
ikw50n65h5a.pdf pdf_icon

IKW50N65F5

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW50N65H5A650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW50N65H5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antipar

Otros transistores... NGTB45N60S2 , NGTB45N60S2WG , NGTG35N65FL2 , NGTG35N65FL2WG , RJH60D7BDPQ-E0 , RJH60D7DPQ-E0 , IGW50N65F5 , IGW50N65H5 , GT30J122 , IKW50N65H5 , IRG8P40N120KD , IRGP6650D , MMG40A120B6C , IRG7PH42UD1M , IRG7PG42UD , IRG7PH44K10D , MMG50S170B6EN .

History: IXDH20N120D1 | HIA20N60BP

 

 
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