IRG8P40N120KD Todos los transistores

 

IRG8P40N120KD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG8P40N120KD

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 305 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Coesⓘ - Capacitancia de salida, typ: 140 pF

Encapsulados: TO247

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IRG8P40N120KD datasheet

 ..1. Size:553K  international rectifier
irg8p40n120kd.pdf pdf_icon

IRG8P40N120KD

IRG8P40N120KDPbF IRG8P40N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 40A, TC =100 C tSC 10 s, TJ(max) = 150 C E E G C G C G E VCE(ON) typ. = 1.7V @ IC = 25A IRG8P40N120KDPbF IRG8P40N120KD EPbF n-channel TO 247AC TO 247AD Applications G C E Industrial Motor Drive Gate Collector E

 9.1. Size:654K  international rectifier
irg8p25n120kd.pdf pdf_icon

IRG8P40N120KD

IRG8P25N120KDPbF IRG8P25N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 25A, TC =100 C E tSC 10 s, TJ(max) = 150 C E G C C G G E VCE(ON) typ. = 1.7V @ IC = 15A IRG8P25N120KDPbF IRG8P25N120KD EPbF n-channel TO 247AC Applications TO 247AD G C E Industrial Motor Drive Gate Collector

 9.2. Size:640K  international rectifier
irg8p15n120kd.pdf pdf_icon

IRG8P40N120KD

IRG8P15N120KDPbF IRG8P15N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 15A, TC =100 C E tSC 10 s, TJ(max) = 150 C E G C G G C E VCE(ON) typ. = 1.7V @ IC = 10A IRG8P15N120KDPbF IRG8P15N120KD EPbF n-channel TO 247AC Applications TO 247AD G C E Industrial Motor Drive Gate Collector E

 9.3. Size:659K  international rectifier
irg8p08n120kd.pdf pdf_icon

IRG8P40N120KD

IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 8A, TC =100 C tSC 10 s, TJ(max) = 150 C E C G E C E VCE(ON) typ. = 1.7V @ IC = 5A G C G G E TO-247AD TO-220AB TO-247AC IRG8P08N120KD-EPbF Applications IRG8B08N120KDPbF IRG8P08N120KDPbF n-channel Ind

Otros transistores... NGTG35N65FL2 , NGTG35N65FL2WG , RJH60D7BDPQ-E0 , RJH60D7DPQ-E0 , IGW50N65F5 , IGW50N65H5 , IKW50N65F5 , IKW50N65H5 , SGT40N60FD2PT , IRGP6650D , MMG40A120B6C , IRG7PH42UD1M , IRG7PG42UD , IRG7PH44K10D , MMG50S170B6EN , NGTB40N120FL , NGTB40N120FLWG .

History: IRGP6650D

 

 

 


History: IRGP6650D

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