MMG50S170B6EN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG50S170B6EN
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 320 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 40 nS
Qgⓘ - Carga total de la puerta, typ: 600 nC
Paquete / Cubierta: MODULE
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MMG50S170B6EN Datasheet (PDF)
mmg50s170b6en.pdf
MMG50S170B6EN1700V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS High frequency switching applica
mmg50s170b6tc.pdf
MMG50S170B6TC1700V 50A IGBT ModuleOctober 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS AC motor control Motion/servo co
mmg50s170b.pdf
MMG50S170B1700V 50A IGBT ModuleJuly 2016 Preliminary RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(Highly rugged SPT+ design) VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS AC motor control Mot
mmg50s120b6hn.pdf
MMG50S120B6HN1200V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching loss
mmg50s120b6tc.pdf
MMG50S120B6TC1200V 50A IGBT ModuleSeptember 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency swi
mmg50s120ua6tn.pdf
MMG50S120UA6TN1200V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAP
mmg50s120b6tn.pdf
MMG50S120B6TN1200V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP
mmg50s120b6uc.pdf
MMG50S120B6UC1200V 50A IGBT ModuleDecember 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS Welding Machine Power Supplies OthersIGBT-invert
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