NGTB40N120FLWG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NGTB40N120FLWG
   Tipo de transistor: IGBT + Diode
   Código de marcado: 40N120FL
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

   Pcⓘ - Máxima potencia disipada: 104 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 41 nS
   Coesⓘ - Capacitancia de salida, typ: 240 pF
   Qgⓘ - Carga total de la puerta, typ: 415 nC
   Paquete / Cubierta: TO247

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NGTB40N120FLWG Datasheet (PDF)

..1. Size:193K onsemi
ngtb40n120flwg.pdf

NGTB40N120FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into thedevice is a soft and fast co-packaged

2.1. Size:145K onsemi
ngtb40n120fl2wg.pdf

NGTB40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

2.2. Size:193K onsemi
ngtb40n120fl.pdf