RJH1CV7DPK - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJH1CV7DPK
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 320
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 30
Colector de Corriente Continua a 25℃ |Ic|, A: 70
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.8
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 45
Capacitancia de salida (Cc), typ, pF: 100
Carga total de la puerta (Qg), typ, nC: 166
Paquete / Cubierta: TO3P
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RJH1CV7DPK Datasheet (PDF)
rjh1cv7dpk.pdf
Preliminary Datasheet RJH1CV7DPK R07DS0748EJ03001200V - 35A - IGBT Rev.3.00Application: Inverter Feb 14, 2013Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wafer
rjh1cv7dpq-e0.pdf
Preliminary Datasheet RJH1CV7DPQ-E0 R07DS0525EJ05001200V - 35A - IGBT Rev.5.00Application: Inverter May 24, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 200 ns typ.) in one package Trench gate and thin wa
r07ds0525ej rjh1cv7dpq.pdf
Preliminary DatasheetRJH1CV7DPQ-E0 R07DS0525EJ03001200 V - 35 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa
r07ds0523ej rjh1cv5dpq.pdf
Preliminary DatasheetRJH1CV5DPQ-E0 R07DS0523EJ03001200 V - 25 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa
r07ds0524ej rjh1cv6dpq.pdf
Preliminary DatasheetRJH1CV6DPQ-E0 R07DS0524EJ03001200 V - 30 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa
rjh1cv5dpk.pdf
Preliminary Datasheet RJH1CV5DPK R07DS0746EJ03001200V - 25A - IGBT Rev.3.00Application: Inverter Feb 14, 2013Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wafer
rjh1cv6dpk.pdf
Preliminary Datasheet RJH1CV6DPK R07DS0747EJ03001200V - 30A - IGBT Rev.3.00Application: Inverter Feb 14, 2013Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wafer
rjh1cv6dpq-e0.pdf
Preliminary Datasheet RJH1CV6DPQ-E0 R07DS0524EJ05001200V - 30A - IGBT Rev.5.00Application: Inverter Jun 12, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa
rjh1cv5dpq-e0.pdf
Preliminary Datasheet RJH1CV5DPQ-E0 R07DS0523EJ05001200V - 25A - IGBT Rev.5.00Application: Inverter Jun 12, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wa
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