NGTB15N120IHR - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTB15N120IHR
Tipo de transistor: IGBT + Diode
Código de marcado: 15N120IHR
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 166 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
Coesⓘ - Capacitancia de salida, typ: 85 pF
Qgⓘ - Carga total de la puerta, typ: 160 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de NGTB15N120IHR - IGBT
NGTB15N120IHR Datasheet (PDF)
ngtb15n120ihr.pdf
NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli
ngtb15n120ihrwg.pdf
NGTB15N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli
ngtb15n120ih.pdf
NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200
ngtb15n120ihl.pdf
NGTB15N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic
ngtb15n120ihwg.pdf
NGTB15N120IHWGProduct PreviewIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching applications.15 A, 1200
Otros transistores... NGTB40N120IHL , NGTB40N120IHLWG , IRGP4063D1 , IRGP4660D , IRGP6660D , MMG50H120X6HN , MMG50S120B6HN , IKW50N60T , GT30F124 , NGTB15N120IHRWG , NGTB20N120IH , NGTB20N120IHWG , MMG150H160UX6TN , MMG75H120X6TN , MMG75S120B6TN , MMG75W120X6TN , MMG75W120XB6TN .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2