MMG75S120B6TN Todos los transistores

 

MMG75S120B6TN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMG75S120B6TN
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 348 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Paquete / Cubierta: MODULE

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MMG75S120B6TN Datasheet (PDF)

 ..1. Size:347K  macmic
mmg75s120b6tn.pdf

MMG75S120B6TN
MMG75S120B6TN

MMG75S120B6TN1200V 75A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP

 2.1. Size:221K  macmic
mmg75s120b6tc.pdf

MMG75S120B6TN
MMG75S120B6TN

MMG75S120B6TC1200V 75A IGBT ModuleAugust 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency switch

 3.1. Size:283K  macmic
mmg75s120b6un.pdf

MMG75S120B6TN
MMG75S120B6TN

MMG75S120B6UN 1200V 75A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATI

 3.2. Size:342K  macmic
mmg75s120b6hn.pdf

MMG75S120B6TN
MMG75S120B6TN

MMG75S120B6HN1200V 75A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching loss

 3.3. Size:400K  macmic
mmg75s120b6c.pdf

MMG75S120B6TN
MMG75S120B6TN

MMG75S120B6C 1200V 75A IGBT Module May 2012 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) V with positive temperature coefficient CE(sat) Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIO

 3.4. Size:1153K  macmic
mmg75s120b6uc.pdf

MMG75S120B6TN
MMG75S120B6TN

MMG75S120B6UC1200V 75A IGBT ModuleNovember 2018 Preliminary RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS Welding Machine Power Supplies OthersIGBT-inver

Otros transistores... MMG50S120B6HN , IKW50N60T , NGTB15N120IHR , NGTB15N120IHRWG , NGTB20N120IH , NGTB20N120IHWG , MMG150H160UX6TN , MMG75H120X6TN , FGD4536 , MMG75W120X6TN , MMG75W120XB6TN , IHW30N120R3 , IHW30N135R3 , IRG8P50N120KD , MMG100HB060H6EN , MMG50HB120H6UN , KGF40N120KDA .

 

 
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