NGTB15N135IHR IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTB15N135IHR
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 357
W
|Vce|ⓘ - Tensión máxima colector-emisor: 1350
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2.15
V @25℃
Tjⓘ -
Temperatura máxima de unión: 175
℃
Coesⓘ - Capacitancia de salida, typ: 87
pF
Paquete / Cubierta:
TO247
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NGTB15N135IHR datasheet
..1. Size:194K onsemi
ngtb15n135ihr.pdf 
NGTB15N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli
6.1. Size:185K onsemi
ngtb15n120flwg.pdf
NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di
6.2. Size:175K onsemi
ngtb15n120lwg.pdf
NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device
6.3. Size:124K onsemi
ngtb15n120ih.pdf
NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching applications. 15 A, 1200
6.4. Size:175K onsemi
ngtb15n120ihr.pdf
NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli
6.5. Size:267K onsemi
ngtb15n120fl2wg.pdf
NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on
6.6. Size:175K onsemi
ngtb15n120l.pdf
NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device
6.7. Size:172K onsemi
ngtb15n120ihl.pdf
NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic
6.8. Size:233K onsemi
ngtb15n120fl2.pdf
NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa
6.9. Size:185K onsemi
ngtb15n120fl.pdf
NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di
6.10. Size:175K onsemi
ngtb15n120ihrwg.pdf
NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli
6.11. Size:124K onsemi
ngtb15n120ihwg.pdf
NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching applications. 15 A, 1200
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History: KGT15N120NDA
