NGTB40N65FL2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB40N65FL2  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 183 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 40 nS

Coesⓘ - Capacitancia de salida, typ: 179 pF

Encapsulados: TO247

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NGTB40N65FL2 datasheet

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NGTB40N65FL2

NGTB40N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft http //

 0.1. Size:270K  onsemi
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NGTB40N65FL2

DATA SHEET www.onsemi.com IGBT - Field Stop II 40 A, 650 V VCEsat = 1.7 V NGTB40N65FL2WG Eoff = 0.44 mJ This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior C performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for

 5.1. Size:175K  onsemi
 ngtb40n65ihl2wg.pdf pdf_icon

NGTB40N65FL2

NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-p

 5.2. Size:180K  onsemi
 ngtb40n65ihl2.pdf pdf_icon

NGTB40N65FL2

NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-p

MOSTRAR MÁS

Otros transistores... KGF40N120KDA, KGF75N60KDB, NGTB15N135IHR, MMG50J120U, STGW60H65DF, STGW60H65DRF, NGTB40N60FL2, NGTB40N60FL2WG, IKW75N60T, MMG75S060B6EN, STGW25H120DF2, STGW25H120F2, STGW25S120DF3, STGW28IH125DF, STGW60H60DLFB, STGW60H65DFB, STGW60H65FB