STGW25H120DF2 Todos los transistores

 

STGW25H120DF2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGW25H120DF2
   Tipo de transistor: IGBT + Diode
   Código de marcado: G25H120DF2
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 375 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 12 nS
   Coesⓘ - Capacitancia de salida, typ: 146 pF
   Qgⓘ - Carga total de la puerta, typ: 100 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

STGW25H120DF2 Datasheet (PDF)

 ..1. Size:732K  st
stgw25h120df2.pdf pdf_icon

STGW25H120DF2

STGW25H120DF2, STGWA25H120DF2Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247

 4.1. Size:952K  st
stgw25h120f2.pdf pdf_icon

STGW25H120DF2

STGW25H120F2, STGWA25H120F2Trench gate field-stop IGBT, H series 1200 V, 25 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 s minimum short circuit withstand time at 3 32 2 TJ=150 C1 1 Tight parameters distribution

 8.1. Size:1046K  st
stgw25m120df3.pdf pdf_icon

STGW25H120DF2

STGW25M120DF3 STGWA25M120DF3Trench gate field-stop IGBT, M series 1200 V, 25 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 25 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

 8.2. Size:698K  st
stgw25s120df3.pdf pdf_icon

STGW25H120DF2

STGW25S120DF3, STGWA25S120DF3Trench gate field-stop IGBT, S series 1200 V, 25 A low dropDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 25 A Tight parameter distribution Safer paralleling Low thermal resistance32 Soft and fast recovery antiparallel diode1TO-247ApplicationsTO-247 long le

Otros transistores... NGTB15N135IHR , MMG50J120U , STGW60H65DF , STGW60H65DRF , NGTB40N60FL2 , NGTB40N60FL2WG , NGTB40N65FL2 , MMG75S060B6EN , GT30G124 , STGW25H120F2 , STGW25S120DF3 , STGW28IH125DF , STGW60H60DLFB , STGW60H65DFB , STGW60H65FB , STGW60V60DF , STGW60V60F .

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