STGW60H60DLFB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGW60H60DLFB
Tipo de transistor: IGBT + Diode
Código de marcado: GW60H60DLFB
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
Coesⓘ - Capacitancia de salida, typ: 262 pF
Qgⓘ - Carga total de la puerta, typ: 306 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de STGW60H60DLFB - IGBT
STGW60H60DLFB Datasheet (PDF)
stgw60h60dlfb.pdf
STGW60H60DLFB STGWT60H60DLFBTrench gate field-stop IGBT, HB series 600 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution3231 Safe paralleling21 Low thermal resistance
stgw60h60dlfb stgwt60h60dlfb.pdf
STGW60H60DLFB STGWT60H60DLFBTrench gate field-stop IGBT, HB series 600 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution3231 Safe paralleling21 Low thermal resistance
stgw60h65dfb.pdf
STGW60H65DFB, STGWA60H65DFB STGWT60H65DFBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3322 VCE(sat) = 1.6 V (typ.) @ IC = 60 A11TO-3PTO-247 Tight parameters distribution Safe paralleling
stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBDatasheetTrench gate field-stop 650 V, 60 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 ATAB Tight parameter distribution Safe paral
stgw60h65drf.pdf
STGW60H65DRF60 A, 650 V field stop trench gate IGBT with Ultrafast diodeDatasheet - production dataApplications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High switching frequency converters321DescriptionTO-247This device is an IGBT developed using an advanced proprietary trench gate and field stop structure
stgw60h65fb.pdf
STGW60H65FB STGWT60H65FBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution332 Safe paralleling211 Low thermal resistanceTO-247
stgw60h65f.pdf
STGW60H65F STGWT60H65F60 A, 650 V field stop trench gate IGBTDatasheet - production dataFeatures High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time3322 Lead free package1 1ApplicationsTO-247TO-3P Photovoltaic inverters Uninterruptible power supply Weldin
stgw60h65df.pdf
STGW60H65DF60 A, 650 V field stop trench gate IGBT with very fast diodeDatasheet - production dataFeatures High speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time32 Very fast soft recovery antiparallel diode1 Lead free packageTO-247Applications Photovoltaic inverters
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , JT075N065WED , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
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