HGTG18N120BND - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HGTG18N120BNDData Sheet March 200754A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 54A, 1200V, TC = 25oCThe HGTG18N120BND is a Non-Punch Through (NPT) 1200V Switching SOA CapabilityIGBT design. This is a new member of the MOS gated high Typical Fall Time . . . . . . . . . . . . . . . 140ns at TJ = 150oCvoltage switching IGBT family. I

IGBT - NPT1200 VHGTG18N120BNDescriptionHGTG18N120BN is based on Non- Punch Through (NPT) IGBTdesigns. The IGBT is ideal for many high voltage switchingwww.onsemi.comapplications operating at moderate frequencies where low conductionlosses are essential, such as: UPS, solar inverter, motor control andCpower supplies.Features 26 A, 1200 V, TC = 110C Low Saturatio

HGTP12N60A4, HGTG12N60A4,HGT1S12N60A4SData Sheet May 1999 File Number 4656.2600V, SMPS Series N-Channel IGBT FeaturesThe HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12AHGT1S12N60A4S are MOS gated high voltage switching 200kHz Operation at 390V, 9Adevices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These de

HGTG11N120CNDData Sheet December 200143A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 43A, 1200V, TC = 25oCThe HGTG11N120CND is a Non-Punch Through (NPT) 1200V Switching SOA CapabilityIGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oCvoltage switching IGBT famil

HGTG12N60A4D, HGTP12N60A4D,HGT1S12N60A4DSData Sheet December 2001600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12AThe HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9AHGT1S12N60A4DS are MOS gated high voltage switching

HGTG10N120BNDData Sheet December 200135A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 35A, 1200V, TC = 25oCThe HGTG10N120BND is a Non-Punch Through (NPT) 1200V Switching SOA CapabilityIGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCvoltage switching IGBT famil

HGTG11N120CN, HGTP11N120CN,HGT1S11N120CNSData Sheet December 200143A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG11N120CN, HGTP11N120CN, and 43A, 1200V, TC = 25oCHGT1S11N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC

HGTP12N60A4, HGTG12N60A4,HGT1S12N60A4S9AData Sheet August 2003600V, SMPS Series N-Channel IGBTs FeaturesThe HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12AHGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9Adevices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These devices ha

HGTG12N60C3DData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oCThe HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oCdevice combining the best features of MOSFETs and bipolar Short Circuit Ratingtransistors. The device has t

HGTG11N120CNDData Sheet December 200143A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 43A, 1200V, TC = 25oCThe HGTG11N120CND is a Non-Punch Through (NPT) 1200V Switching SOA CapabilityIGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oCvoltage switching IGBT famil

SMPS Series N-ChannelIGBT with Anti-ParallelHyperfast Diode600 VHGTG12N60A4D,www.onsemi.comHGTP12N60A4D,HGT1S12N60A4DSCThe HGTG12N60A4D, HGTP12N60A4D andHGT1S12N60A4DS are MOS gated high voltage switching devicesGcombining the best features of MOSFETs and bipolar transistors.These devices have the high input impedance of a MOSFET and theElow on-state conduction los

UFS Series N-Channel IGBTwith Anti-Parallel HyperfastDiode24 A, 600 VHGTG12N60C3Dwww.onsemi.comThe HGTG12N60C3D is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolarCtransistors. The device has the high input impedance of a MOSFETand the low on-state conduction loss of a bipolar transistor. The muchlower on-state voltage drop varies

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

S E M I C O N D U C T O R HGTG12N60D1D12A, 600V N-Channel IGBTwith Anti-Parallel Ultrafast DiodeApril 1995Features PackageJEDEC STYLE TO-247 12A, 600V Latch Free OperationEMITTERCOLLECTOR Typical Fall Time

S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeJanuary 1997Features Package 24A, 600V at TC = 25oCJEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MO

S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeAugust 1995Features Package 24A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MOS gated high voltage swit