STGW60H65FB Todos los transistores

 

STGW60H65FB IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGW60H65FB
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 375 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 38 nS
   Coesⓘ - Capacitancia de salida, typ: 262 pF
   Paquete / Cubierta: TO247
 

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STGW60H65FB PDF specs

 ..1. Size:1229K  st
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STGW60H65FB

STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution 3 3 2 Safe paralleling 2 1 1 Low thermal resistance TO-247 ... See More ⇒

 4.1. Size:1508K  st
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STGW60H65FB

STGW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT Datasheet - production data Features High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 3 2 2 Lead free package 1 1 Applications TO-247 TO-3P Photovoltaic inverters Uninterruptible power supply Weldin... See More ⇒

 5.1. Size:1574K  st
stgw60h65dfb.pdf pdf_icon

STGW60H65FB

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 3 3 2 2 VCE(sat) = 1.6 V (typ.) @ IC = 60 A 1 1 TO-3P TO-247 Tight parameters distribution Safe paralleling ... See More ⇒

 5.2. Size:685K  st
stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf pdf_icon

STGW60H65FB

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 60 A TAB Tight parameter distribution Safe paral... See More ⇒

Otros transistores... NGTB40N65FL2 , MMG75S060B6EN , STGW25H120DF2 , STGW25H120F2 , STGW25S120DF3 , STGW28IH125DF , STGW60H60DLFB , STGW60H65DFB , G50T65D , STGW60V60DF , STGW60V60F , STGWA25H120DF2 , STGWA25H120F2 , STGWA25S120DF3 , STGWA60H65DFB , STGWT28IH125DF , STGWT60H60DLFB .

 

 
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