STGWT60H65DFB IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGWT60H65DFB
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 38 nS
Coesⓘ - Capacitancia de salida, typ: 262 pF
Paquete / Cubierta: TO3P
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STGWT60H65DFB PDF specs
stgwt60h65dfb.pdf
STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 3 3 2 2 VCE(sat) = 1.6 V (typ.) @ IC = 60 A 1 1 TO-3P TO-247 Tight parameters distribution Safe paralleling ... See More ⇒
stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 60 A TAB Tight parameter distribution Safe paral... See More ⇒
stgwt60h65fb.pdf
STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution 3 3 2 Safe paralleling 2 1 1 Low thermal resistance TO-247 ... See More ⇒
stgw60h60dlfb stgwt60h60dlfb.pdf
STGW60H60DLFB STGWT60H60DLFB Trench gate field-stop IGBT, HB series 600 V, 60 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution 3 2 3 1 Safe paralleling 2 1 Low thermal resistance ... See More ⇒
Otros transistores... STGW60V60DF , STGW60V60F , STGWA25H120DF2 , STGWA25H120F2 , STGWA25S120DF3 , STGWA60H65DFB , STGWT28IH125DF , STGWT60H60DLFB , IKW50N60T , STGWT60H65FB , STGWT60V60DF , NGTB20N120IHR , NGTB20N120IHRWG , NGTB30N120IHR , NGTB30N120IHRWG , NGTB40N120IHR , NGTB40N120IHRWG .
History: CM1400DUC-24S | CM150DY-24A
History: CM1400DUC-24S | CM150DY-24A
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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