STGWT60H65DFB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWT60H65DFB  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 375 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃

trⓘ - Tiempo de subida, typ: 38 nS

Coesⓘ - Capacitancia de salida, typ: 262 pF

Encapsulados: TO3P

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STGWT60H65DFB datasheet

 ..1. Size:1574K  st
 stgwt60h65dfb.pdf pdf_icon

STGWT60H65DFB

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 3 3 2 2 VCE(sat) = 1.6 V (typ.) @ IC = 60 A 1 1 TO-3P TO-247 Tight parameters distribution Safe paralleling

 ..2. Size:685K  st
 stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf pdf_icon

STGWT60H65DFB

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 60 A TAB Tight parameter distribution Safe paral

 4.1. Size:1229K  st
 stgwt60h65fb.pdf pdf_icon

STGWT60H65DFB

STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution 3 3 2 Safe paralleling 2 1 1 Low thermal resistance TO-247

 5.1. Size:1493K  st
 stgw60h60dlfb stgwt60h60dlfb.pdf pdf_icon

STGWT60H65DFB

STGW60H60DLFB STGWT60H60DLFB Trench gate field-stop IGBT, HB series 600 V, 60 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution 3 2 3 1 Safe paralleling 2 1 Low thermal resistance

MOSTRAR MÁS

Otros transistores... STGW60V60DF, STGW60V60F, STGWA25H120DF2, STGWA25H120F2, STGWA25S120DF3, STGWA60H65DFB, STGWT28IH125DF, STGWT60H60DLFB, RJP63F3DPP-M0, STGWT60H65FB, STGWT60V60DF, NGTB20N120IHR, NGTB20N120IHRWG, NGTB30N120IHR, NGTB30N120IHRWG, NGTB40N120IHR, NGTB40N120IHRWG