STGWT60H65DFB
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGWT60H65DFB
Tipo de transistor: IGBT + Diode
Código de marcado: GWT60H65DFB
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375
W
|Vce|ⓘ - Tensión máxima colector-emisor: 650
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.75
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 7
V
Tjⓘ -
Temperatura máxima de unión: 175
℃
trⓘ - Tiempo de subida, typ: 38
nS
Coesⓘ - Capacitancia de salida, typ: 262
pF
Qgⓘ - Carga total de la puerta, typ: 306
nC
Paquete / Cubierta:
TO3P
Búsqueda de reemplazo de STGWT60H65DFB
- IGBT
STGWT60H65DFB
Datasheet (PDF)
..1. Size:1574K st
stgwt60h65dfb.pdf 
STGW60H65DFB, STGWA60H65DFB STGWT60H65DFBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3322 VCE(sat) = 1.6 V (typ.) @ IC = 60 A11TO-3PTO-247 Tight parameters distribution Safe paralleling
..2. Size:685K st
stgw60h65dfb stgwa60h65dfb stgwt60h65dfb.pdf
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFBDatasheetTrench gate field-stop 650 V, 60 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 ATAB Tight parameter distribution Safe paral
4.1. Size:1229K st
stgwt60h65fb.pdf
STGW60H65FB STGWT60H65FBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution332 Safe paralleling211 Low thermal resistanceTO-247
5.1. Size:1493K st
stgw60h60dlfb stgwt60h60dlfb.pdf
STGW60H60DLFB STGWT60H60DLFBTrench gate field-stop IGBT, HB series 600 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution3231 Safe paralleling21 Low thermal resistance
5.2. Size:1494K st
stgwt60h60dlfb.pdf
STGW60H60DLFB STGWT60H60DLFBTrench gate field-stop IGBT, HB series 600 V, 60 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 60 A Tight parameters distribution3231 Safe paralleling21 Low thermal resistance
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