NGTB20N120IHR Todos los transistores

 

NGTB20N120IHR - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB20N120IHR
   Tipo de transistor: IGBT + Diode
   Código de marcado: 20N120IHR
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 192 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 124 pF
   Qgⓘ - Carga total de la puerta, typ: 225 nC
   Paquete / Cubierta: TO247
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NGTB20N120IHR Datasheet (PDF)

 ..1. Size:181K  onsemi
 ngtb20n120ihr.pdf pdf_icon

NGTB20N120IHR

NGTB20N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellhttp://onsemi.comsuited for resonant or soft switching applica

 0.1. Size:181K  onsemi
 ngtb20n120ihrwg.pdf pdf_icon

NGTB20N120IHR

NGTB20N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellhttp://onsemi.comsuited for resonant or soft switching applica

 2.1. Size:174K  onsemi
 ngtb20n120ihl.pdf pdf_icon

NGTB20N120IHR

NGTB20N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 2.2. Size:182K  onsemi
 ngtb20n120ihswg.pdf pdf_icon

NGTB20N120IHR

NGTB20N120IHSWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

MOSTRAR MÁS

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History: IKD15N60R | FGM622S | TSG40N120CE

 

 
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