NGTB25N120S IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTB25N120S
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 192 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
trⓘ - Tiempo de subida, typ: 74 nS
Coesⓘ - Capacitancia de salida, typ: 151 pF
Encapsulados: TO247
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NGTB25N120S datasheet
ngtb25n120s.pdf
NGTB25N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast http //onsemi.co
ngtb25n120swg.pdf
NGTB25N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com
ngtb25n120fl.pdf
NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di
ngtb25n120fl2.pdf
NGTB25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa
Otros transistores... NGTB20N120IHR , NGTB20N120IHRWG , NGTB30N120IHR , NGTB30N120IHRWG , NGTB40N120IHR , NGTB40N120IHRWG , NGTB25N120FL2 , NGTB25N120FL2WG , CRG40T60AK3HD , NGTB25N120SWG , NGTG25N120FL2 , NGTG25N120FL2WG , NGTB20N135IHR , NGTB20N135IHRWG , NGTB30N135IHR , NGTB30N135IHRWG , NGTB40N135IHR .
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