NGTB25N120S Todos los transistores

 

NGTB25N120S IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB25N120S

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 192 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 74 nS

Coesⓘ - Capacitancia de salida, typ: 151 pF

Encapsulados: TO247

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NGTB25N120S datasheet

 ..1. Size:86K  onsemi
ngtb25n120s.pdf pdf_icon

NGTB25N120S

NGTB25N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast http //onsemi.co

 0.1. Size:84K  onsemi
ngtb25n120swg.pdf pdf_icon

NGTB25N120S

NGTB25N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

 4.1. Size:186K  onsemi
ngtb25n120fl.pdf pdf_icon

NGTB25N120S

NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di

 4.2. Size:148K  onsemi
ngtb25n120fl2.pdf pdf_icon

NGTB25N120S

NGTB25N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa

Otros transistores... NGTB20N120IHR , NGTB20N120IHRWG , NGTB30N120IHR , NGTB30N120IHRWG , NGTB40N120IHR , NGTB40N120IHRWG , NGTB25N120FL2 , NGTB25N120FL2WG , CRG40T60AK3HD , NGTB25N120SWG , NGTG25N120FL2 , NGTG25N120FL2WG , NGTB20N135IHR , NGTB20N135IHRWG , NGTB30N135IHR , NGTB30N135IHRWG , NGTB40N135IHR .

 

 

 


 
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