NGTB20N135IHRWG Todos los transistores

 

NGTB20N135IHRWG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB20N135IHRWG
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 197 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1350 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 124 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

NGTB20N135IHRWG Datasheet (PDF)

 0.1. Size:183K  onsemi
 ngtb20n135ihrwg.pdf pdf_icon

NGTB20N135IHRWG

NGTB20N135IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 1.1. Size:183K  onsemi
 ngtb20n135ihr.pdf pdf_icon

NGTB20N135IHRWG

NGTB20N135IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT ishttp://onsemi.comwell suited for resonant or soft switching appli

 6.1. Size:174K  onsemi
 ngtb20n120ihl.pdf pdf_icon

NGTB20N135IHRWG

NGTB20N120IHLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the devic

 6.2. Size:176K  onsemi
 ngtb20n120lwg.pdf pdf_icon

NGTB20N135IHRWG

NGTB20N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

MOSTRAR MÁS

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History: AFGHL40T65SQ | IKQ100N60TA | SKM300GB124D | APTGF50DU120T | IXGH28N60BD1 | STGW40M120DF3

 

 
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