STGW80V60F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGW80V60F
Tipo de transistor: IGBT
Código de marcado: GW80V60F
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 469 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 390 pF
Qgⓘ - Carga total de la puerta, typ: 448 nC
Paquete / Cubierta: TO247
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STGW80V60F Datasheet (PDF)
stgw80v60f.pdf
STGFW80V60F, STGW80V60F, STGWT80V60FTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 80 A21 Tight parameters distributionTABTO-3PF Safe paralleling Low thermal resistance33Applicati
stgw80v60df.pdf
STGW80V60DF STGWT80V60DFTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution3 Safe paralleling3221 Low thermal resistance1 Very fast soft recovery antipa
stgw80v60df stgwt80v60df.pdf
STGW80V60DF STGWT80V60DFTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution3 Safe paralleling3221 Low thermal resistance1 Very fast soft recovery antipa
stgw80h65dfb.pdf
STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB STGWT80H65DFBTrench gate field-stop IGBT, HB series 650 V, 80 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current32211 VCE(sat) = 1.6 V (typ.) @ IC = 80 AMax247 TO-247 Tight parameter distributionTAB Safe par
stgw80h65fb.pdf
STGW80H65FB, STGWA80H65FB, STGWT80H65FBTrench gate field-stop IGBT, HB series 650 V, 80 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 80 A3 3 Tight parameter distribution2211 Safe parallelingTO-3PTO-247 Low
stgw80h65dfb stgwt80h65dfb.pdf
STGW80H65DFB, STGWT80H65DFBDatasheetTrench gate field-stop 650 V, 80 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current323 Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A121 Tight parameter distributionTO-247TO-3P Safe paralleling Positive VCE(s
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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