MM40G120L IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MM40G120L
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 410 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.65 V @25℃
trⓘ - Tiempo de subida, typ: 60 nS
Encapsulados: TO264
Búsqueda de reemplazo de MM40G120L IGBT
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MM40G120L datasheet
mm40g3u120bx.pdf
MM40G3U120BX 1200V 40A IGBT September 2019 Version 01 RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS High frequency switching application 1.Gate Medical
mm40g3u120b.pdf
MM40G3U120B 1200V 40A IGBT September 2019 Version 03 RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS High frequency switching application 1.Gate Medical a
mm40g3t120b.pdf
MM40G3T120B 1200V 40A IGBT May 2018 Version 01 RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS High frequency switching application 1.Gate Medical applica
Otros transistores... STGWT80H65FB , STGWT80V60DF , STGWT80V60F , 70MT060WSP , RJH65S04DPQ-A0 , 1MBI75U4F-120L-50 , IRG7PH50K10D , MMG50A120B6C , TGD30N40P , MMG100J060U , MMG50J120UZ , MMG100S060B6EN , 50MT060ULSTAPBF , VS-GB70LA60UF , VS-GB70NA60UF , IRGP4266 , MMG100S120B6TN .
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Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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