IRGP4790D Todos los transistores

 

IRGP4790D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGP4790D

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 455 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 140 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 70 nS

Coesⓘ - Capacitancia de salida, typ: 310 pF

Encapsulados: TO247

 Búsqueda de reemplazo de IRGP4790D IGBT

- Selección ⓘ de transistores por parámetros

 

IRGP4790D datasheet

 ..1. Size:894K  international rectifier
 irgp4790d.pdf pdf_icon

IRGP4790D

IRGP4790DPbF IRGP4790D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100 C tSC 5.5 s, TJ(max) = 175 C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 75A E IRGP4790DPbF IRGP4790D EPbF n-channel Applications TO 247AC TO 247AD Industrial Motor Drive G C E UPS Gate Collector

 6.1. Size:796K  international rectifier
 irgp4790.pdf pdf_icon

IRGP4790D

IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 90A, TC =100 C tSC 5.5 s, TJ(max) = 175 C E G E C C G G VCE(ON) typ. = 1.7V @ IC = 75A E n-channel IRGP4790PbF IRGP4790 EPbF Applications TO 247AC TO 247AD Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters We

 8.1. Size:833K  international rectifier
 irgp4760.pdf pdf_icon

IRGP4790D

IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 60A, TC =100 C tSC 5.5 s, TJ(max) = 175 C G E E C C G G E VCE(ON) typ. = 1.7V @ IC = 48A IRGP4760PbF IRGP4760 EPbF n-channel TO 247AC TO 247AD Applications G C E Industrial Motor Drive Gate Collector Emitter UPS Solar Inverters Weldin

 8.2. Size:837K  international rectifier
 irgp4740d.pdf pdf_icon

IRGP4790D

IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100 C tSC 5.5 s, TJ(max) = 175 C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 24A E IRGP4740DPbF IRGP4740D-EPbF n-channel TO-247AC TO-247AD Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Sola

MOSTRAR MÁS

Otros transistores... IRGP4266 , MMG100S120B6TN , MMG100W120X6TN , NGTB30N120FL2 , NGTB30N120FL2WG , IRGP4690D , IRGP4266D , IRGP4790 , GT30F132 , MMG75S060B6N , 40MT120UHAPBF , 40MT120UHTAPBF , MMG75H120H6HN , MMG75HB120H6HN , MMG75HB120H6UN , MMG75S060B6R , IRGP6690D .

History: MMG100W120X6TN | IRGP4790 | VS-GB70NA60UF | MMG150S060B6EN | VS-GB70LA60UF

 

 

 


 
↑ Back to Top
.