IRGP4790D Todos los transistores

 

IRGP4790D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRGP4790D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 455 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 140 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 70 nS
   Coesⓘ - Capacitancia de salida, typ: 310 pF
   Paquete / Cubierta: TO247

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IRGP4790D Datasheet (PDF)

 ..1. Size:894K  international rectifier
irgp4790d.pdf

IRGP4790D
IRGP4790D

IRGP4790DPbF IRGP4790D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C E E GC C G G VCE(ON) typ. = 1.7V @ IC = 75A EIRGP4790DPbFIRGP4790DEPbFn-channelApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector

 6.1. Size:796K  international rectifier
irgp4790.pdf

IRGP4790D
IRGP4790D

IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor VCES = 650V CIC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C E GE C C G G VCE(ON) typ. = 1.7V @ IC = 75A En-channel IRGP4790PbFIRGP4790EPbFApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters We

 8.1. Size:833K  international rectifier
irgp4760.pdf

IRGP4790D
IRGP4790D

IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor VCES = 650V CIC = 60A, TC =100C tSC 5.5s, TJ(max) = 175C GE E C C G G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP4760PbFIRGP4760EPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector Emitter UPS Solar Inverters Weldin

 8.2. Size:837K  international rectifier
irgp4740d.pdf

IRGP4790D
IRGP4790D

IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100C tSC 5.5s, TJ(max) = 175C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 24A EIRGP4740DPbF IRGP4740D-EPbF n-channelTO-247AC TO-247AD Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Sola

 8.3. Size:678K  international rectifier
irgp4750d.pdf

IRGP4790D
IRGP4790D

IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100C tSC 5.5s, TJ(max) = 175C E E GC C G G VCE(ON) typ. = 1.7V @ IC = 35A EIRGP4750DPbFIRGP4750DEPbFn-channelApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector

 8.4. Size:939K  international rectifier
irgp4760d.pdf

IRGP4790D
IRGP4790D

IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100C tSC 5.5s, TJ(max) = 175C G E E C C G G EVCE(ON) typ. = 1.7V @ IC = 48A IRGP4760DPbFIRGP4760DEPbFn-channelTO247ACTO247ADApplications G C E Industrial Motor Drive Gate Collector Emitter

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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