MMG75S120B6HN Todos los transistores

 

MMG75S120B6HN IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG75S120B6HN

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 500 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 70 nS

Encapsulados: MODULE

 Búsqueda de reemplazo de MMG75S120B6HN IGBT

- Selección ⓘ de transistores por parámetros

 

MMG75S120B6HN datasheet

 ..1. Size:342K  macmic
mmg75s120b6hn.pdf pdf_icon

MMG75S120B6HN

MMG75S120B6HN 1200V 75A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching loss

 3.1. Size:283K  macmic
mmg75s120b6un.pdf pdf_icon

MMG75S120B6HN

MMG75S120B6UN 1200V 75A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATI

 3.2. Size:400K  macmic
mmg75s120b6c.pdf pdf_icon

MMG75S120B6HN

MMG75S120B6C 1200V 75A IGBT Module May 2012 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) V with positive temperature coefficient CE(sat) Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIO

 3.3. Size:221K  macmic
mmg75s120b6tc.pdf pdf_icon

MMG75S120B6HN

MMG75S120B6TC 1200V 75A IGBT Module August 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switch

Otros transistores... MMG50SR120B , MMG50SR120DE , MMG50SR120FZB , MMG50SR120UA , MMG50SR120UK , MMG50SR120UZA , MMG50SR120UZK , MMG75J120U6HN , RJP30E2DPP-M0 , NGTB50N60L2 , NGTB50N60L2WG , NGTB75N60FL2 , NGTB75N60FL2WG , NGTB75N60S , NGTB75N60SWG , NGTB75N65FL2 , NGTB75N65FL2WG .

 

 

 


🌐 : EN  ES  РУ

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

se9302 transistor | fr5305 datasheet | y2 transistor | 40n06 | bc108b | oc84 | c6090 | ksa1015yta

 


 
↑ Back to Top
.