MMG150D120B6HN Todos los transistores

 

MMG150D120B6HN IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMG150D120B6HN

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1050 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 70 nS

Encapsulados: MODULE

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MMG150D120B6HN datasheet

 ..1. Size:429K  macmic
 mmg150d120b6hn.pdf pdf_icon

MMG150D120B6HN

MMG150D120B6HN 1200V 150A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo

 2.1. Size:364K  macmic
 mmg150d120b6uc.pdf pdf_icon

MMG150D120B6HN

MMG150D120B6UC 1200V 150A IGBT Module April 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery APPLICATIONS Welding Machine Power Supplies Others IGBT-inverte

 2.2. Size:399K  macmic
 mmg150d120b6tc.pdf pdf_icon

MMG150D120B6HN

MMG150D120B6TC 1200V 150A IGBT Module August 2020 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency swit

 2.3. Size:293K  macmic
 mmg150d120b6un.pdf pdf_icon

MMG150D120B6HN

MMG150D120B6UN 1200V 150A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICA

MOSTRAR MÁS

Otros transistores... MMG200S060B6R , MMG200D060B6N , MMG300Q060B6N , MMG300Q060B6EN , MMG150D170B6EN , MMG150SR120B , MMG100D120B6HN , MMG300D060B6EN , CRG15T120BNR3S , MMG200D120B6TN , MMG200Q120B , MMG200Q120B6TN , MMG225WB120B6TN , MMG200Q120B6HN , MMG400HB060B6EN , MMG400Q060B6EN , MMG150DR120B .

 

 

 


 
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