MMG150D120B6HN Todos los transistores

 

MMG150D120B6HN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMG150D120B6HN
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1050 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 70 nS
   Qgⓘ - Carga total de la puerta, typ: 700 nC
   Paquete / Cubierta: MODULE
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MMG150D120B6HN Datasheet (PDF)

 ..1. Size:429K  macmic
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MMG150D120B6HN

MMG150D120B6HN1200V 150A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo

 2.1. Size:364K  macmic
mmg150d120b6uc.pdf pdf_icon

MMG150D120B6HN

MMG150D120B6UC1200V 150A IGBT ModuleApril 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS Welding Machine Power Supplies OthersIGBT-inverte

 2.2. Size:399K  macmic
mmg150d120b6tc.pdf pdf_icon

MMG150D120B6HN

MMG150D120B6TC1200V 150A IGBT ModuleAugust 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency swit

 2.3. Size:293K  macmic
mmg150d120b6un.pdf pdf_icon

MMG150D120B6HN

MMG150D120B6UN 1200V 150A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICA

Otros transistores... MMG200S060B6R , MMG200D060B6N , MMG300Q060B6N , MMG300Q060B6EN , MMG150D170B6EN , MMG150SR120B , MMG100D120B6HN , MMG300D060B6EN , JT075N065WED , MMG200D120B6TN , MMG200Q120B , MMG200Q120B6TN , MMG225WB120B6TN , MMG200Q120B6HN , MMG400HB060B6EN , MMG400Q060B6EN , MMG150DR120B .

History: IXSK40N60BD1

 

 
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