MMG200D120B6TN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG200D120B6TN
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1050 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 40 nS
Paquete / Cubierta: MODULE
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MMG200D120B6TN Datasheet (PDF)
mmg200d120b6tn.pdf
MMG200D120B6TN1200V 200A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesA
mmg200d120b6tc.pdf
MMG200D120B6TC1200V 200A IGBT ModuleJuly 2020 Version 02 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency switch
mmg200d120b6un.pdf
MMG200D120B6UN 1200V 200A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICA
mmg200d120b6hn.pdf
MMG200D120B6HN1200V 200A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo
mmg200d120b6uc.pdf
MMG200D120B6UC1200V 200A IGBT ModuleApril 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS Welding Machine Power Supplies OthersIGBT-inverte
Otros transistores... MMG200D060B6N , MMG300Q060B6N , MMG300Q060B6EN , MMG150D170B6EN , MMG150SR120B , MMG100D120B6HN , MMG300D060B6EN , MMG150D120B6HN , NGD8201N , MMG200Q120B , MMG200Q120B6TN , MMG225WB120B6TN , MMG200Q120B6HN , MMG400HB060B6EN , MMG400Q060B6EN , MMG150DR120B , MMG150DR120DE .
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