MMG800K120U6HN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG800K120U6HN
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 3300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 800 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 120 nS
Paquete / Cubierta: MODULE
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MMG800K120U6HN Datasheet (PDF)
mmg800k120u6hn.pdf
MMG800K120U6HN1200V 800A IGBT ModuleJune 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching los
mmg800k060u6en.pdf
MMG800K060U6EN600V 800A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg800d060b6en.pdf
MMG800D060B6EN 600V 800A IGBT Module January 2013 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS GD Series Module High f
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