IRG7PSH54K10D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG7PSH54K10D
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 520 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
Tjⓘ -
Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 290 pF
Encapsulados: TO274AA
Búsqueda de reemplazo de IRG7PSH54K10D IGBT
- Selección ⓘ de transistores por parámetros
IRG7PSH54K10D datasheet
..1. Size:764K international rectifier
irg7psh54k10d.pdf 
IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 1200V IC = 65A, TC =100 C tSC 10 s, TJ(max) = 150 C E G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel IRG7PSH54K10DPbF Applications Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VC
6.1. Size:384K international rectifier
irg7psh50ud.pdf
PD - 97548 IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 50A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode Tight paramete
7.1. Size:388K international rectifier
irg7psh73k10.pdf
PD - 97406A IRG7PSH73K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 1200V Low VCE (ON) Trench IGBT Technology Low Switching Losses IC(Nominal) = 75A Maximum Junction Temperature 175 C 10 S short Circuit SOA G tSC 10 s, TJ(max) =175 C Square RBSOA 100% of The Parts Tested for ILM E VCE(on) typ. = 2.0V Positive VCE (ON) Temperatur
9.1. Size:299K international rectifier
irg7ph42u-ep.pdf
PD - 96233B IRG7PH42UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH42U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 60A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VC
9.2. Size:374K international rectifier
irg7ph35u.pdf
PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C I NOMINAL = 20A Square RBSOA 100% of the parts tested for ILM G TJ(max) = 175 C Positive VCE (ON) temperature co-efficient Tight parameter distribution E VCE(on)
9.3. Size:300K international rectifier
irg7ph35ud1m.pdf
IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low VCE (ON) trench IGBT Technology VCES = 1200V Low Switching Losses Square RBSOA IC = 25A, TC = 100 C Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity G TJ(max) = 150 C 100% of the Parts Tested for ILM
9.4. Size:561K international rectifier
irg7ph50k10d.pdf
IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1200V C IC = 50A, TC =100 C tSC 10 s, TJ(max) = 150 C G C E G VCE(ON) typ. = 1.9V @ IC = 35A C E E G n-channel IRG7PH50K10DPbF IRG7PH50K10D EPbF Applications Industrial Motor Drive G C E UPS Gate Collector Emitter So
9.5. Size:399K international rectifier
irg7ph28ud1.pdf
IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS C VCES = 1200V Features Low VCE (ON) trench IGBT technology IC = 15A, TC = 100 C Low switching losses TJ(MAX) = 150 C G Square RBSOA Ultra-low VF diode VCE(ON) typ. = 1.95V E 1300Vpk repetitiv
9.6. Size:462K international rectifier
irg7ph35udpbf irg7ph35ud-ep.pdf
PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode T
9.7. Size:361K international rectifier
irg7ph50u-e.pdf
PD - 97549 IRG7PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH50U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 90A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VCE
9.8. Size:441K international rectifier
irg7pg35u.pdf
IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1000V Features Low VCE (ON) trench IGBT technology IC = 35A, TC = 100 C Low switching losses G TJ(MAX) = 175 C Square RBSOA 100% of the parts tested for ILM E VCE(ON) typ. = 1.9V@ IC = 20A Positive VCE (ON) temperature co-efficient n-channel Tight par
9.9. Size:326K international rectifier
irg7ph35ud1.pdf
IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching Losses I NOMINAL = 20A Square RBSOA Ultra-Low VF Diode G TJ(max) = 150 C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I
9.10. Size:217K international rectifier
irg7p313u.pdf
PD - 96409 IRG7P313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 20A l Optimized for Sustain and Energy Recovery 1.35 V circuits in PDP applications IRP max @ TC= 25 C 200 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Le
9.11. Size:435K international rectifier
irg7ph42ud-ep.pdf
PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diod
9.12. Size:189K international rectifier
irg7pc28u.pdf
PD - 97723 PDP TRENCH IGBT IRG7PC28UPbF Key Parameters Features VCE min 600 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 40A 1.70 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 225 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l
9.13. Size:437K international rectifier
irg7ph30k10d.pdf
PD - 97403 IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 1200V Low switching losses 10 S short circuit SOA IC = 16A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G tSC 10 s, TJ(max) = 150 C Positive VCE (ON) Temperature co-efficient Ultra
9.14. Size:321K international rectifier
irg7ph30k10.pdf
PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features C Low VCE (ON) Trench IGBT Technology VCES = 1200V Low Switching Losses Maximum Junction Temperature 175 C IC = 23A, TC = 100 C 10 S short Circuit SOA Square RBSOA G tSC 10 s, TJ(max) =175 C 100% of the parts tested for ILM E Positive VCE (ON) Temperature Co-Efficient VC
9.16. Size:653K international rectifier
irg7ph37k10d.pdf
IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V G C G IC = 25A, TC =100 C E tSC 10 s, TJ(max) = 150 C E G C C G G E VCE(ON) typ. = 1.9V @ IC = 15A IRG7PH37K10DPbF IRG7PH37K10D EPbF n-channel TO 247AC TO 247AD Applications G C E Industrial Motor Drive Gate Collecto
9.17. Size:461K international rectifier
irg7ph35ud.pdf
PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode T
9.18. Size:539K international rectifier
irg7pk35ud1.pdf
IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 1400V C IC = 20A, TC =100 C TJ(max) = 150 C G E E C G C G VCE(ON) typ. = 2.0V @ IC = 20A E IRG7PK35UD1PbF IRG7PK35UD1 EPbF n-channel TO 247AC TO 247AD Applications Induction heating G C E Microwave ovens Gate Colle
9.19. Size:299K international rectifier
irg7ph42u.pdf
PD - 96233B IRG7PH42UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH42U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 60A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VC
9.20. Size:894K international rectifier
irg7ph44k10d.pdf
IRG7PH44K10DPbF IRG7PH44K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C C C IC = 40A, TC =100 C tSC 10 s, TJ(max) = 150 C G E C E G C G E VCE(ON) typ. = 1.9V @ IC = 25A IRG7PH44K10DPbF IRG7PH44K10D EPbF n-channel TO 247AC TO 247AD Applications G C E Industrial Motor Drive Gate Collector E
9.21. Size:374K international rectifier
irg7ph35u-ep.pdf
PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C I NOMINAL = 20A Square RBSOA 100% of the parts tested for ILM G TJ(max) = 175 C Positive VCE (ON) temperature co-efficient Tight parameter distribution E VCE(on)
9.22. Size:351K international rectifier
irg7ph46ud-e.pdf
IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode Tight parame
9.23. Size:351K international rectifier
irg7ph46ud.pdf
IRG7PH46UDPbF IRG7PH46UD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA I NOMINAL = 40A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diode Tight parame
9.24. Size:283K international rectifier
irg7ph42ud1m.pdf
IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C Ultra-low VF Diode TJ(max) = 150 C 1300Vpk repetitive transient capacity G 100% of the parts tested for ILM VCE
9.25. Size:265K international rectifier
irg7pa19u.pdf
PD-96357 PDP TRENCH IGBT IRG7PA19UPbF Features Key Parameters VCE min 360 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.49 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 300 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lea
9.26. Size:297K international rectifier
irg7ph46u.pdf
PD - 96305A IRG7PH46UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH46U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 75A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VC
9.27. Size:326K international rectifier
irg7ph35ud1-ep.pdf
IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching Losses I NOMINAL = 20A Square RBSOA Ultra-Low VF Diode G TJ(max) = 150 C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I
9.28. Size:565K international rectifier
irg7pg42ud.pdf
IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1000V Features Low VCE (ON) trench IGBT technology IC = 45A, TC = 100 C Low switching losses G Square RBSOA TJ(MAX) = 150 C 100% of the parts tested for ILM E VCE(ON) typ. = 1.7V @ IC = 30A Positive VCE (ON) temperature co-efficient n-channel Ultra
9.29. Size:435K international rectifier
irg7ph42ud.pdf
PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diod
9.30. Size:361K international rectifier
irg7ph50u.pdf
PD - 97549 IRG7PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH50U-EP Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Maximum junction temperature 175 C IC = 90A, TC = 100 C Square RBSOA 100% of the parts tested for ILM G TJ(max) =175 C Positive VCE (ON) temperature co-efficient E Tight parameter distribution VCE
9.31. Size:331K international rectifier
irg7ph42ud1.pdf
IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF Diode G 1300Vpk repetitive transient capacity TJ(max) = 150 C 100% of the parts tested for IL
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