MMG150HB060B6EN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG150HB060B6EN
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Qgⓘ - Carga total de la puerta, typ: 1600 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MMG150HB060B6EN - IGBT
MMG150HB060B6EN Datasheet (PDF)
mmg150hb060b6en.pdf
MMG150HB060B6EN600V 150A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP
mmg150hb060h6en.pdf
MMG150HB060H6EN600V 150A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg150h160ux6tn.pdf
MMG150H160UX6TN3-Phase Rectifier Bridge with Brake ModuleJune 2015 Version 01 RoHS CompliantPRODUCT FEATURES Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS Drive inverters with brake systemBRAKE-CHOPPER SECTORIGBT-CHOPP
Otros transistores... MMG600K170U6EN , T0570VB25G , MMG600KR120U , MMG800K120U6HN , MMG400K170U6EN , IRG7PSH54K10D , MMG100S060B6R , MMG75S170B6EN , RJP6065DPM , MMG150S060B6R , MMG100HB120H6HN , MMG100D120B6TN , MMG75S120B6UN , NSGM75GB120 , MMG100S120B6HN , MMG200S060B6EN , MMG100S170B6EN .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2