MMG150S120B6TN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG150S120B6TN
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 625 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MMG150S120B6TN - IGBT
MMG150S120B6TN Datasheet (PDF)
mmg150s120b6tn.pdf
MMG150S120B6TN1200V 150A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesA
mmg150s120b6tc.pdf
MMG150S120B6TC1200V 150A IGBT Module August 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency swi
mmg150s120b6uc.pdf
MMG150S120B6UC1200V 150A IGBT ModuleAugust 2019 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS Welding Machine Power S
mmg150s120ua6tc.pdf
MMG150S120UA6TC1200V 150A IGBT Module August 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency sw
Otros transistores... MMG100S120B6C , MMG100S120B6UN , MMG100SR060B , MMG100SR060DE , MMG100SR060UK , MMG100SR060UZA , MMG100SR060UZK , MMG150S060B6N , TGAN40N60FD , MMG150W120X6TN , MMG75J120U , MMG75J120UZ , MMG75S120B6C , MMG75SR120DE , MMG75SR120UA , MMG75SR120UK , MMG75SR120UZA .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2