MMG400D060UK6N IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG400D060UK6N
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1400 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
trⓘ - Tiempo de subida, typ: 65 nS
Coesⓘ - Capacitancia de salida, typ: 1800 pF
Encapsulados: MODULE
Búsqueda de reemplazo de MMG400D060UK6N IGBT
- Selección ⓘ de transistores por parámetros
MMG400D060UK6N datasheet
mmg400d060uk6n.pdf
MMG400D060UK6N 600V 400A IGBT Module July 2010 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient Integrated Gate Resistor APPLICATIONS Invertor Convertor Welder GD Series Module SMPS and UPS Induction Heating ABSOLUTE MAXIMUM RATINGS T =25 C unless other
mmg400d060b6tc.pdf
MMG400D060B6TC 600V 400A IGBT Module May 2020 Preliminary RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) High short circuit capability VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switchi
mmg400d060b6n.pdf
MMG400D060B6N 600V 400A IGBT Module July 2010 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient Integrated Gate Resistor APPLICATIONS Invertor Convertor Welder GD Series Module SMPS and UPS Induction Heating ABSOLUTE MAXIMUM RATINGS TC=25 C unless otherw
mmg400d060de6en.pdf
MMG400D060DE6EN 600V 400A IGBT Module April 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses A
Otros transistores... MMG200DR120DE , MMG200DR120UA , MMG200DR120UK , MMG200DR120UZA , MMG200DR120UZK , MMG225WB170B6EN , MMG300WB120B6TN , MMG400D060B6N , CRG60T60AN3H , MMG300D120B6TN , MMG300D120B6UN , MMG600WB060B6EN , MMG300D120B6HN , MMG300WB170B6EN , MMG400K120U6TN , MMG400K120U6UN , MMG150D120B6UN .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
c2389 transistor | c2634 transistor | mdp1991 datasheet | 40636 transistor | ao3407 datasheet | c1841 transistor | fb42n20d | irfb3306 equivalent





