MMG600WB060B6EN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG600WB060B6EN
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 600 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 90 nS
Qgⓘ - Carga total de la puerta, typ: 6500 nC
Paquete / Cubierta: MODULE
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MMG600WB060B6EN Datasheet (PDF)
mmg600wb060b6en.pdf
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Otros transistores... MMG200DR120UZA , MMG200DR120UZK , MMG225WB170B6EN , MMG300WB120B6TN , MMG400D060B6N , MMG400D060UK6N , MMG300D120B6TN , MMG300D120B6UN , IKW75N60T , MMG300D120B6HN , MMG300WB170B6EN , MMG400K120U6TN , MMG400K120U6UN , MMG150D120B6UN , MMG300D060B6N , MMG300D170B6EN , MMG400D060B6EN .
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