FF200R06KE3 Todos los transistores

 

FF200R06KE3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FF200R06KE3
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 680 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Paquete / Cubierta: MODULE
 

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FF200R06KE3 Datasheet (PDF)

 ..1. Size:463K  infineon
ff200r06ke3.pdf pdf_icon

FF200R06KE3

Technische Information / Technical InformationIGBT-ModuleFF200R06KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled3 Diode 62mm C-Serien module with trench/fieldstop IGBT3 and Emitter Controlled3 diode IGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 600 Vvj CESColle

 6.1. Size:707K  infineon
ff200r06ye3.pdf pdf_icon

FF200R06KE3

/ Technical InformationIGBT-FF200R06YE3IGBT-modulesIGBT- / IGBT,Inverter Preliminary Data / Maximum Rated ValuesT = 25C V 600 Vvj CESCollector-emitter voltageDC T = 50C, T = 175C I 200 AC vj max C nomCo

 8.1. Size:339K  infineon
ff200r33kf2c.pdf pdf_icon

FF200R06KE3

Technische Information / Technical InformationIGBT-ModulFF200R33KF2CIGBT-ModuleVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspannung T = 25C 3300vjV VCESCollector-emitter voltage T = -25C 3300vjKollektor-Dauergleichstrom T = 80C, T = 150C I 200 AC vj max C nomContin

 8.2. Size:630K  infineon
ff200r12ks4.pdf pdf_icon

FF200R06KE3

Technische Information / Technical InformationIGBT-ModuleFF200R12KS4IGBT-modules62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Appli

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History: TA49015 | STGFW30V60DF | MIAA20WE600TMH | BRGH25N120D | APT100GN60LDQ4G | BSM150GAR120DN2 | BLG40T65FDK-F

 

 
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