IKQ100N60TA Todos los transistores

 

IKQ100N60TA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKQ100N60TA
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 714 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 38 nS
   Coesⓘ - Capacitancia de salida, typ: 360 pF
   Paquete / Cubierta: TO247
 

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IKQ100N60TA Datasheet (PDF)

 ..1. Size:2201K  infineon
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IKQ100N60TA

IGBTLow Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diodeIKQ100N60TA600V low loss switching series third generationData sheetIndustrial Power ControlIKQ100N60TATRENCHSTOPTM seriesLow Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled di

 4.1. Size:1927K  infineon
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IKQ100N60TA

IKQ100N60TTRENCHSTOPTM seriesLow Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery anti-parallel Emitter Controlled diodeCFeatures: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 5sG TRENCHSTOPTM and Fieldstop technology for 600VEapplications offers:- very tight parameter

 5.1. Size:1940K  infineon
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IKQ100N60TA

AIKQ100N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Sho

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History: AFGHL50T65SQD | SRE40N065FSUDG

 

 
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