IKQ100N60TA Todos los transistores

 

IKQ100N60TA IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKQ100N60TA

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 714 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 38 nS

Coesⓘ - Capacitancia de salida, typ: 360 pF

Encapsulados: TO247

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IKQ100N60TA datasheet

 ..1. Size:2201K  infineon
ikq100n60ta.pdf pdf_icon

IKQ100N60TA

IGBT Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode IKQ100N60TA 600V low loss switching series third generation Data sheet Industrial Power Control IKQ100N60TA TRENCHSTOPTM series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled di

 4.1. Size:1927K  infineon
ikq100n60t.pdf pdf_icon

IKQ100N60TA

IKQ100N60T TRENCHSTOPTM series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled diode C Features Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C Short circuit withstand time 5 s G TRENCHSTOPTM and Fieldstop technology for 600V E applications offers - very tight parameter

 5.1. Size:1940K  infineon
aikq100n60ct.pdf pdf_icon

IKQ100N60TA

AIKQ100N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Sho

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History: MUBW15-12T7

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