IKQ100N60TA Todos los transistores

 

IKQ100N60TA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKQ100N60TA
   Tipo de transistor: IGBT + Diode
   Código de marcado: K100T60A
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 714 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 38 nS
   Coesⓘ - Capacitancia de salida, typ: 360 pF
   Qgⓘ - Carga total de la puerta, typ: 610 nC
   Paquete / Cubierta: TO247

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IKQ100N60TA Datasheet (PDF)

 ..1. Size:2201K  infineon
ikq100n60ta.pdf

IKQ100N60TA
IKQ100N60TA

IGBTLow Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diodeIKQ100N60TA600V low loss switching series third generationData sheetIndustrial Power ControlIKQ100N60TATRENCHSTOPTM seriesLow Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled di

 4.1. Size:1927K  infineon
ikq100n60t.pdf

IKQ100N60TA
IKQ100N60TA

IKQ100N60TTRENCHSTOPTM seriesLow Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery anti-parallel Emitter Controlled diodeCFeatures: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 5sG TRENCHSTOPTM and Fieldstop technology for 600VEapplications offers:- very tight parameter

 5.1. Size:1940K  infineon
aikq100n60ct.pdf

IKQ100N60TA
IKQ100N60TA

AIKQ100N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Sho

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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