APT75GN120B2G Todos los transistores

 

APT75GN120B2G IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT75GN120B2G

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 833 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 99 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃

Coesⓘ - Capacitancia de salida, typ: 275 pF

Encapsulados: TO247

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APT75GN120B2G datasheet

 ..1. Size:82K  apt
apt75gn120b2g.pdf pdf_icon

APT75GN120B2G

TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-Max TO-264 results in superior VCE(on) perform

 4.1. Size:82K  apt
apt75gn120lg.pdf pdf_icon

APT75GN120B2G

TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-Max TO-264 results in superior VCE(on) perform

 4.2. Size:420K  apt
apt75gn120j.pdf pdf_icon

APT75GN120B2G

TYPICAL PERFORMANCE CURVES APT75GN120J 1200V APT75GN120J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g

 4.3. Size:331K  apt
apt75gn120jdq3.pdf pdf_icon

APT75GN120B2G

TYPICAL PERFORMANCE CURVES APT75GN120JDQ3 1200V APT75GN120JDQ3 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A buil

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History: IRG4PC50SD | IXBT22N300HV

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