IQG1B228N120B4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IQG1B228N120B4
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 228 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.87 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 140 nS
Coesⓘ - Capacitancia de salida, typ: 1200 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
IQG1B228N120B4 Datasheet (PDF)
iqg1b228n120b4.pdf
IQG1B228N120B4PRELIMINARY DATASHEETIGBT Module in iQpakTM3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 228CoT =80 CCPeak collect
iqg1b600n120b4.pdf
IQG1B600N120B4PRELIMINARY DATASHEETIGBT Module in iQPaK3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb-free finished; RoHS compliantMAXIMUM RATINGSParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 600CoT =80 CCPeak collector currentI 1200 ACpulsoT =80 CC
iqg1b300n120b4.pdf
IQG1B300N120B4PRELIMINARY DATASHEETIGBT Module in iQpak3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 300CoT =80 CCPeak collect
iqg1b150n120b4.pdf
IQG1B150N120B4PRELIMINARY DATASHEETIGBT Module in iQpakTM3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 150CoT =80 CCPeak collect
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: APTGT600U170D4 | APTGT75SK120D1
History: APTGT600U170D4 | APTGT75SK120D1
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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