IQGB150N120I4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IQGB150N120I4
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 91 nS
Coesⓘ - Capacitancia de salida, typ: 800 pF
Qgⓘ - Carga total de la puerta, typ: 1560 nC
Paquete / Cubierta: MODULE
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IQGB150N120I4 Datasheet (PDF)
iqgb150n120i4.pdf
IQGB150N120I4PRELIMINARY DATASHEET1200V 150A, IGBT Module in iQpak 2PackageHalf-Bridge Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 150CoT =80 CCPeak collector c
iqgb150n120ga4.pdf
IQGB150N120GA4PRELIMINARY DATASHEETIGBT Module in iQPak 2 PackagePFC-Boost configuration Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 150CoT =80 CCPeak collector current I 30
iqgb150n120gb4.pdf
IQGB150N120GB4PRELIMINARY DATASHEETIGBT Module in iQPak2 PackagePFC-Buck configuration Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 150CoT =80 CCPeak collector current I 300
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2