IQGB150N120I4 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IQGB150N120I4
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
trⓘ - Tiempo de subida, typ: 91 nS
Coesⓘ - Capacitancia de salida, typ: 800 pF
Encapsulados: MODULE
Búsqueda de reemplazo de IQGB150N120I4 IGBT
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IQGB150N120I4 datasheet
iqgb150n120i4.pdf
IQGB150N120I4 PRELIMINARY DATASHEET 1200V 150A, IGBT Module in iQpak 2 Package Half-Bridge Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliant MAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Collector-emitter voltage V 1200 V CES DC collector current I 150 C o T =80 C C Peak collector c
iqgb150n120ga4.pdf
IQGB150N120GA4 PRELIMINARY DATASHEET IGBT Module in iQPak 2 Package PFC-Boost configuration Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliant MAXIMUM RATINGS, at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Collector-emitter voltage V 1200 V CES DC collector current I 150 C o T =80 C C Peak collector current I 30
iqgb150n120gb4.pdf
IQGB150N120GB4 PRELIMINARY DATASHEET IGBT Module in iQPak 2 Package PFC-Buck configuration Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliant MAXIMUM RATINGS, at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Collector-emitter voltage V 1200 V CES DC collector current I 150 C o T =80 C C Peak collector current I 300
Otros transistores... IQAB75N60D1 , IQG1B150N120B4 , IQG1B228N120B4 , IQG1B300N120B4 , IQG1B456N120B4 , IQG1B600N120B4 , IQGB150N120GA4 , IQGB150N120GB4 , IXRH40N120 , IQGB228N120GA4 , IQGB228N120GB4 , IQGB228N120I4 , IQGB300N120GA4 , IQGB300N120I4 , IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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