IQGB300N120GA4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IQGB300N120GA4
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.87 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 33 nS
Coesⓘ - Capacitancia de salida, typ: 1420 pF
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
IQGB300N120GA4 Datasheet (PDF)
iqgb300n120ga4.pdf

IQGB300N120GA4PRELIMINARY DATASHEETIGBT Module in iQpak 2 PackagePFC Boost Configuration Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 300CoT =80 CCPeak collector c
iqgb300n120i4.pdf

IQGB300N120I4PRELIMINARY DATASHEETIGBT Module in iQpak 2 PackageHalf-Bridge Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 300CoT =80 CCPeak collector current I 600
iqgb300n60i4.pdf

IQGB300N60I4PRELIMINARY DATASHEET600V 300A, N-Channel IGBT in Trench & Field Stoptechnology with soft, fast recovery anti-paralleldiode, Half-Bridge Configuration in iQPak2PackageFEATURES Very high switching speed Very low VCE(sat) Short circuit withstand time 5 us Very tight parameter distribution High ruggedness, temperature stability Very sof
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: APTGT100DA120D1 | APTGT100X120TE3 | SKM100GAL12T4 | IRGIB10B60KD1P | 6MBI100VX-120-50 | SMBL1G300US60 | 2SH17
History: APTGT100DA120D1 | APTGT100X120TE3 | SKM100GAL12T4 | IRGIB10B60KD1P | 6MBI100VX-120-50 | SMBL1G300US60 | 2SH17



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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