IQGB300N120GA4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IQGB300N120GA4
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 300 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.87 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 33 nS
Coesⓘ - Capacitancia de salida, typ: 1420 pF
Qgⓘ - Carga total de la puerta, typ: 3060 nC
Paquete / Cubierta: MODULE
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IQGB300N120GA4 Datasheet (PDF)
iqgb300n120ga4.pdf
IQGB300N120GA4PRELIMINARY DATASHEETIGBT Module in iQpak 2 PackagePFC Boost Configuration Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 300CoT =80 CCPeak collector c
iqgb300n120i4.pdf
IQGB300N120I4PRELIMINARY DATASHEETIGBT Module in iQpak 2 PackageHalf-Bridge Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 300CoT =80 CCPeak collector current I 600
iqgb300n60i4.pdf
IQGB300N60I4PRELIMINARY DATASHEET600V 300A, N-Channel IGBT in Trench & Field Stoptechnology with soft, fast recovery anti-paralleldiode, Half-Bridge Configuration in iQPak2PackageFEATURES Very high switching speed Very low VCE(sat) Short circuit withstand time 5 us Very tight parameter distribution High ruggedness, temperature stability Very sof
Otros transistores... IQG1B456N120B4 , IQG1B600N120B4 , IQGB150N120GA4 , IQGB150N120GB4 , IQGB150N120I4 , IQGB228N120GA4 , IQGB228N120GB4 , IQGB228N120I4 , IXRH40N120 , IQGB300N120I4 , IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , IQIB75N60D3 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2