IXYN100N65B3D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Advance Technical InformationVCES = 650VXPTTM 650V IXYN100N65B3D1IC110 = 100AGenX3TM w/ DiodeVCE(sat) 1.85Vtfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M

Preliminary Technical InformationVCES = 650V650V XPTTM IGBT IXYN100N65A3IC110 = 100AGenX3TM VCE(sat) 1.80V tfi(typ) = 122nsUltra Low-Vsat PT IGBTfor up to 5kHz SwitchingESOT-227B, miniBLOCE153432Symbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 650 VG

Preliminary Technical InformationVCES = 650VXPTTM 650V GenX3TM IXYN100N65C3H1IC110 = 90Aw/ Sonic DiodeVCE(sat) 2.3Vtfi(typ) = 60nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, R

1200V XPTTM IGBT VCES = 1200VIXYN100N120C3H1GenX3TM w/ Diode IC110 = 60A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES C

1200V XPTTM IGBT VCES = 1200VIXYN100N120C3GenX3TM IC110 = 84A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTEfor 20-50 kHz SwitchingSOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 175C 1200 VE VCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous

Preliminary Technical Information1200V XPTTM IGBT VCES = 1200VIXYN100N120B3H1GenX3TM w/ Diode IC110 = 76A VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES