IXBH20N160 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXBH20N160
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 4.7 V @25℃
trⓘ - Tiempo de subida, typ: 60 nS
Coesⓘ - Capacitancia de salida, typ: 140 pF
Encapsulados: TO247AD
Búsqueda de reemplazo de IXBH20N160 IGBT
- Selección ⓘ de transistores por parámetros
IXBH20N160 datasheet
ixbh20n160.pdf
High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 International standard package VCES TJ = 25 C to 150 C 140
ixbh20n140-160.pdf
High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 International standard package VCES TJ = 25 C to 150 C 140
ixbh20n140.pdf
High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 International standard package VCES TJ = 25 C to 150 C 140
ixbh20n360hv.pdf
Advance Technical Information High Voltage, High Gain VCES = 3600V IXBT20N360HV BIMOSFETTM Monolithic IXBH20N360HV IC110 = 20A Bipolar MOS Transistor VCE(sat) 3.4V TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 3600 V E C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V VGES Continuous 20 V TO-247HV (IXBH) VGEM
Otros transistores... IXBH10N300 , IXBH10N300HV , IXBH14N300HV , IXBA10N300HV , IXBA12N300HV , IXBA14N300HV , IXBA16N170AHV , IXBH20N140 , IKW75N60T , IXBH20N360HV , IXBH22N300HV , IXBH40N140 , IXBH42N250 , IXBH42N300HV , IXBJ40N140 , IXBJ40N160 , IXBL20N300C .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
tip36c | bd139 transistor | irf840 datasheet | ge10001 | irf830 | irfp450 | mj21193 | s9014 transistor