IXBH40N140 Todos los transistores

 

IXBH40N140 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXBH40N140
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 350 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1400 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 33 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 6.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 60 nS
   Coesⓘ - Capacitancia de salida, typ: 220 pF
   Paquete / Cubierta: TO247AD
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IXBH40N140 Datasheet (PDF)

 ..1. Size:60K  ixys
 ixbh40n140.pdf pdf_icon

IXBH40N140

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 6.2 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features40N140 40N160 International standard packageVCES TJ = 25C to 150C 140

 0.1. Size:61K  ixys
 ixbh40n140-160.pdf pdf_icon

IXBH40N140

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 6.2 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features40N140 40N160 International standard packageVCES TJ = 25C to 150C 140

 6.1. Size:60K  ixys
 ixbh40n160.pdf pdf_icon

IXBH40N140

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 6.2 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features40N140 40N160 International standard packageVCES TJ = 25C to 150C 140

 9.1. Size:206K  ixys
 ixbh42n250.pdf pdf_icon

IXBH40N140

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH42N250BIMOSFETTM MonolithicIC110 = 42ABipolar MOS TransistorVCE(sat) 3.0VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 2500 VEVGES Continuous 25 VG = Gate C = CollectorVGEM Transient 35

MOSTRAR MÁS

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IGB20N65S5 | NGD15N41A | 2MBI300NB-060 | IQGB300N120I4 | IRG4PC40FDPBF | JNG20T60PS | IXBF12N300

 

 
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