HGTH12N40C1D Todos los transistores

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HGTH12N40C1D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTH12N40C1D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 75W

Tensión colector-emisor (Vce): 400V

Voltaje de saturación colector-emisor (Vce sat): 4.5V

Tensión emisor-compuerta (Veg): 20V

Corriente del colector DC máxima (Ic): 12A

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 50

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO218

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HGTH12N40C1D Datasheet (PDF)

2.1. hgth12n4.pdf Size:45K _harris_semi

HGTH12N40C1D
HGTH12N40C1D

HGTH12N40C1D, HGTH12N40E1D, S E M I C O N D U C T O R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max. EMITTER TFALL: 1s, 0.5s COLLECTOR GATE Low On-State Voltage Fast Switching Speeds COLLECTOR High Input Impedance (FLANGE) Anti-Parall

5.1. hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf Size:196K _fairchild_semi

HGTH12N40C1D
HGTH12N40C1D

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oC HGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC voltage swi

Otros transistores... HGTG40N60B3 , HGTG40N60C3 , HGTG40N60C3R , HGTG5N120BND , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 , HGTG20N60A4D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 , HGTH12N50E1D , HGTM12N40C1 , HGTM12N40E1 .

 


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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


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