IXXN100N60B3H1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXXN100N60B3H1 Datasheet (PDF)

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Advance Technical InformationXPTTM 600V VCES = 600VIXXN100N60B3H1GenX3TM w/ Diode IC90 = 100A VCE(sat) 1.80V tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V E VCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous

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VCES = 650VXPTTM 650V GenX4TM IXXN110N65C4H1IC110 = 110Aw/ Sonic Diode VCE(sat) 2.35V tfi(typ) = 30nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingESOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M

9.2. Size:224K ixys
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VCES = 650VXPTTM 650V GenX4TM IXXN110N65B4H1IC110 = 110Aw/ Sonic Diode VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 6

Otros transistores... IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 , IXGC16N60C2D1 , IXGQ170N30PB , IXGQ240N30PB , IXGQ85N33PCD1 , IXGQ90N27PB , IRGP4066D , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 , IXXH30N60B3 .