IXXN110N65C4H1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXXN110N65C4H1 Datasheet (PDF)

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VCES = 650VXPTTM 650V GenX4TM IXXN110N65C4H1IC110 = 110Aw/ Sonic Diode VCE(sat) 2.35V tfi(typ) = 30nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingESOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M

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VCES = 650VXPTTM 650V GenX4TM IXXN110N65B4H1IC110 = 110Aw/ Sonic Diode VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M 6

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Advance Technical InformationXPTTM 600V VCES = 600VIXXN100N60B3H1GenX3TM w/ Diode IC90 = 100A VCE(sat) 1.80V tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V E VCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .